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62064BP-1 PDF даташит

Спецификация 62064BP-1 изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую « TD62064BP-1».

Детали детали

Номер произв 62064BP-1
Описание TD62064BP-1
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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62064BP-1 Даташит, Описание, Даташиты
TD62064BP-1/BF
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TD62064BP-1,TD62064BF
4CH HIGHCURRENT DARLINGTON SINK DRIVER
The TD62064BP1 and TD62064BF are highvoltage,
highcurrent darlington drivers comprised of four NPN
darlington pairs. All units feature integral clamp diodes for
switching inductive loads.
Applications include relay, hammer, lamp and stepping motor
drivers.
FEATURES
Package Type BP1 : DIP16 pin
BF : HSOP16 pin
High Output Sustaining Voltage : VCE(SUS) = 80 V (min)
Output Current (Single Output) : IOUT = 1.5 A / ch (max)
Output Clamp Diodes
Input Compatible with TTL and 5 V CMOS
GND and SUB Terminal = Heat Sink
PIN CONNECTION (TOP VIEW)
Weight
DIP16-P-300-2.54A: 1.11 g (typ.)
HSOP16-P-300-1.00: 0.50 g (typ.)
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62064BP-1 Даташит, Описание, Даташиты
SCHEMATICS (EACH DRIVER)
TD62064BP-1/BF
Note : The input and output parasitic diodes cannot be used as clamp diodes.
PRECAUTIONS for USING
(1) This IC does not include built-in protection circuits for excess current or overvoltage.
If this IC is subjected to excess current or overvoltage, it may be destroyed.
Hence, the utmost care must be taken when systems which incorporate this IC are designed.
Utmost care is necessary in the design of the output line, COMMON and GND line since IC may be destroyed
due to shortcircuit between outputs, air contamination fault, or fault by improper grounding.
(2) If a TD62064BP-1/BF is being used to drive an inductive load (such as a motor, solenoid or relay), Toshiba
recommends that the diodes (pins 1 and 8) be connected to the secondary power supply pin so as to absorb the
counter electromotive force generated by the load. Please adhere to the device’s absolute maximum ratings.
Toshiba recommends that zener diodes be connected between the diodes (pins 1 and 8) and the secondary
power supply pin (as the anode) so as to enable rapid absorption of the counter electromotive force. Again,
please adhere to the device’s absolute maximum ratings.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Sustaining Voltage
Parasitic Transistor Output Voltage
Output Current
Input Current
Input Voltage
Clamp Diode Reverse Voltage
Clamp Diode Forward Current
Power Dissipation
BP1
BF
Operating Temperature
Storage Temperature
VCE(SUS)
VCEF
(Note 1)
IOUT
IIN
VIN
VR
IF
PD
Topr
Tstg
0.5 ~ 80
80
1.5
50
7
80
1.5
1.47 / 2.7
(Note 2)
0.9 / 1.4
(Note 3)
40 ~ 85
55 ~ 150
V
V
A / ch
mA
V
V
A
W
°C
°C
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OUTPUT)
Cu 50%)
Output
Voltage
Note 3: On Glass Epoxy PCB (60 × 30 × 1.6 mm Cu 30%)
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62064BP-1 Даташит, Описание, Даташиты
RECOMMENDED OPERATING CONDITIONS (Ta = 40~85°C)
TD62064BP-1/BF
CHARACTERISTIC
SYMBOL
CONDITION
MIN
Output Sustaining Voltage
Output Current
BP1 (Note 1)
BF (Note 2)
Input Voltage
(Output On)
(Output Off)
Input Current
Clamp Diode Reverse Voltage
Clamp Diode Forward Current
Power Dissipation
BP1
BF
VCE(SUS)
IOUT
VIN
VIN(ON)
VIN(OFF)
IIN
VR
IF
PD
DC 1 Circuit, Ta = 25°C
Tpw = 25ms
4 Circuits
Tj = 120°C
Ta = 85°C
Duty = 10 %
Duty = 50 %
Duty = 10 %
Duty = 50 %
IOUT = 1.25 A
Ta = 85°C
Ta = 85°C
(Note 1)
(Note 2)
0
0
0
0
0
0
0
2.5
0
0
0
Note 1: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 50%)
Note 2: On Glass Epoxy PCB (60 × 30 × 1.6 mm Cu 30%)
TYP.
MAX UNIT
80 V
1250
1250
380 mA / ch
900
170
5.5 V
8V
0.4 V
20 mA
80 V
1.25 A
1.4
W
0.7
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
CHARACTERISTIC
Output Leakage Current
Output Saturation Voltage
DC Current Transfer Ratio
Input Voltage (Output On)
Clamp Diode Leakage Current
Clamp Diode Forward Voltage
Input Capacitance
TurnOn Delay
TurnOff Delay
Parasitic Transistor Output Voltage
SYMBOL
ICEX
VCE(sat)
hFE
VIN (ON)
IR
VF
CIN
tON
tOFF
VCEF
TEST
CIR
CUIT
TEST CONDITION
1 VCE = 80 V, Ta = 25°C
VCE = 80 V, Ta = 85°C
2 IOUT = 1.25 A, VIN = 2.4 V
IOUT = 0.75 A, VIN = 2.4 V
2 VCE = 2 V, IOUT = 1.25 A
3 IOUT = 1.25 A, IIN = 2 mA
4 VR = 80 V, Ta = 25°C
VR = 80 V, Ta = 85°C
5 IF = 1.25 A
6 VIN = 0, f = 1 MHz
7 VOUT = 80 V, RL = 68
8 ICEF = 150 mA
MIN
80
TYP.
1500
1.5
15
0.1
1.0
MAX UNIT
50
µA
100
1.6
V
1.25
2.4 V
50
µA
100
2.0 V
pF
µs
V
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3 2006-06-14










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Номер в каталогеОписаниеПроизводители
62064BP-1 TD62064BP-1Toshiba Semiconductor
Toshiba Semiconductor

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