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HN4G01J PDF даташит

Спецификация HN4G01J изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «Audio Frequency General Purpose Amplifier Applications».

Детали детали

Номер произв HN4G01J
Описание Audio Frequency General Purpose Amplifier Applications
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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HN4G01J Даташит, Описание, Даташиты
TOSHIBA Multi Chip Discrece Device
HN4G01J
HN4G01J
Audio Frequency General Purpose Amplifier Applications
Q1
z Small package (Dual type)
z High voltage and high current
: VCEO = 50V, IC = 150mA (max)
z High hFE : hFE = 120~400
z Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Unit: mm
Q2
z Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Q1 : 2SC4837F
Q2 : RN1103F
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
VCBO
VCEO
VEBO
IC
IB
Rating
60
50
5
150
30
1.BASE1
2.EMITTER
3.BASE2
4.COLLECTOR2
5.COLLECTOR1
(B1)
(E)
(B2)
(C2)
(C1)
JEDEC
Unit JEITA
V TOSHIBA
2-3L1A
V Weight: 0.014g(Typ.)
V
mA
mA
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
10
100
Unit
V
V
V
mA
Absolute Maximum Ratings (Ta = 25°C) (Q1,Q2Common)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
PC*
Tj
Tstg
Rating
300
150
55~150
Unit
mW
°C
°C
www.DataNShoteee:t4UUs.cinogmcontinuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*Total rating.
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HN4G01J Даташит, Описание, Даташиты
Electrical Characteristics (Ta = 25°C ) (Q1)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
Test Condition
VCB = 60 V, IE = 0
VEB = 5 V, IC = 0
VCE = 6 V, IC = 2 mA
IC = 100 mA, IB = 10 mA
VCE = 10 V, IC = 1 mA
VCB = 10 V, IE = 0, f = 1 MHz
Electrical Characteristics (Ta = 25°C) (Q2)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test Condition
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 10 V, IC = 0
VCE = 5 V, IC = 10 mA
IC = 5 mA, IB = 0.25 mA
VCE = 0.2 V, IC = 5 mA
VCE = 5 V, IC = 0.1 mA
VCE = 10 V, IC = 5 mA
VCB = 10 V, IE = 0, f = 1 MHz
Marking
Equivalent Circuit (top view)
54
70 Q1 Q2
HN4G01J
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
120 400
0.1 0.25 V
60 ⎯ ⎯ MHz
2.0 pF
Min Typ. Max Unit
⎯ ⎯ 100
nA
⎯ ⎯ 500
0.17 0.33 mA
120
0.1 0.3 V
1.3 3.0 V
1.0 1.5 V
250 MHz
3 pF
15.4 22 28.6 kΩ
0.9 1.0 1.1
123
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HN4G01J Даташит, Описание, Даташиты
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Q1
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Номер в каталогеОписаниеПроизводители
HN4G01JAudio Frequency General Purpose Amplifier ApplicationsToshiba Semiconductor
Toshiba Semiconductor

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