SBP13007D PDF даташит
Спецификация SBP13007D изготовлена «WINSEMI SEMICONDUCTOR» и имеет функцию, называемую «High Voltage Fast-Switching NPN Power Transistor». |
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Детали детали
Номер произв | SBP13007D |
Описание | High Voltage Fast-Switching NPN Power Transistor |
Производители | WINSEMI SEMICONDUCTOR |
логотип |
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SBP13007D
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed
◆ Minimum Lot-to-Lot hFE Variation
◆ Wide Reverse Bias SOA
◆ Built-in free wheeling diode
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
TSTG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at TC = 25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
Value
700
400
9.0
8.0
16
4.0
8.0
80
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance Junction to Case
www.DataSheet4UR.cθoJAm
Thermal Resistance Junction to Ambient
Value
1.67
62.5
Units
℃/W
℃/W
Oct 2008. Rev. 0
Copyright @ Semiwell Semiconductor Co.,Ltd.,All rights reserved.
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SBP13007D
Electrical Characteristics (TC=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
Colletor Cut-off Current
ICEV ( VBE = -1.5V )
VCE = 700V
VCE = 700V ,TC = 100℃
Value
Min Typ Max
- - 1.0
- - 5.0
Units
mA
VCEO(SUS) Collector-Emitter Sustaining Voltage IB = 0, IC = 10mA
400 -
-
V
VCE(sat)
VBE(sat)
hFE
ts
tf
fT
VF
COB
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC =2.0A, IB = 0.4A
IC = 5.0A, IB = 1.0A
IC = 8.0A, IB = 2.0A
IC =2.0A, IB = 0.4A
IC = 5.0A, IB = 1.0A
DC Current Gain
IC = 2.0A, VCE = 5V
IC = 5.0A, VCE = 5V
Storage Time
Fall Time
Current Gain Bandwidth Product
Diode Forward Voltage
Output Capacitance
IC = 5.0A, VCC = 125V
IB1 = 1.0A, IB2 = -1.0A
TP = 25us
IC=0.5A ,VCE=10V
IF=2A
IC=0.5A ,VCE=10V
0.6
- - 1.5
3.0
1.2
--
1.6
10 40
10 30
V
V
3.6
-
-
1.6
㎲
4-
- MHz
- - 2.5 V
- 6.5
pF
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
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SBP13007D
Fig. 1 DC Current Gain
Fig. 2 Saturation Voltage
Fig. 3 Power Derating
Fig. 4 Safe Operation Area
Fig. 5 Collect output capacitance
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Номер в каталоге | Описание | Производители |
SBP13007-H1 | High Voltage Fast-Switching NPN Power Transistor | SemiWell Semiconductor |
SBP13007-H2 | High Voltage Fast-Switching NPN Power Transistor | SemiWell Semiconductor |
SBP13007-O | High Voltage Fast-Switching NPN Power Transistor | WINSEMI SEMICONDUCTOR |
SBP13007-X | High Voltage Fast-Switching NPN Power Transistor | WINSEMI SEMICONDUCTOR |
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