DataSheet26.com

SBP13007D PDF даташит

Спецификация SBP13007D изготовлена ​​​​«WINSEMI SEMICONDUCTOR» и имеет функцию, называемую «High Voltage Fast-Switching NPN Power Transistor».

Детали детали

Номер произв SBP13007D
Описание High Voltage Fast-Switching NPN Power Transistor
Производители WINSEMI SEMICONDUCTOR
логотип WINSEMI SEMICONDUCTOR логотип 

4 Pages
scroll

No Preview Available !

SBP13007D Даташит, Описание, Даташиты
SBP13007D
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
Minimum Lot-to-Lot hFE Variation
Wide Reverse Bias SOA
Built-in free wheeling diode
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
TSTG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at TC = 25
Operation Junction Temperature
Storage Temperature
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
Value
700
400
9.0
8.0
16
4.0
8.0
80
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance Junction to Case
www.DataSheet4UR.cθoJAm
Thermal Resistance Junction to Ambient
Value
1.67
62.5
Units
/W
/W
Oct 2008. Rev. 0
Copyright @ Semiwell Semiconductor Co.,Ltd.,All rights reserved.
1/4









No Preview Available !

SBP13007D Даташит, Описание, Даташиты
SBP13007D
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
Colletor Cut-off Current
ICEV ( VBE = -1.5V )
VCE = 700V
VCE = 700V ,TC = 100
Value
Min Typ Max
- - 1.0
- - 5.0
Units
mA
VCEO(SUS) Collector-Emitter Sustaining Voltage IB = 0, IC = 10mA
400 -
-
V
VCE(sat)
VBE(sat)
hFE
ts
tf
fT
VF
COB
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC =2.0A, IB = 0.4A
IC = 5.0A, IB = 1.0A
IC = 8.0A, IB = 2.0A
IC =2.0A, IB = 0.4A
IC = 5.0A, IB = 1.0A
DC Current Gain
IC = 2.0A, VCE = 5V
IC = 5.0A, VCE = 5V
Storage Time
Fall Time
Current Gain Bandwidth Product
Diode Forward Voltage
Output Capacitance
IC = 5.0A, VCC = 125V
IB1 = 1.0A, IB2 = -1.0A
TP = 25us
IC=0.5A ,VCE=10V
IF=2A
IC=0.5A ,VCE=10V
0.6
- - 1.5
3.0
1.2
--
1.6
10 40
10 30
V
V
3.6
-
-
1.6
4-
- MHz
- - 2.5 V
- 6.5
pF
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
www.DataSheet4U.com
2/4
.









No Preview Available !

SBP13007D Даташит, Описание, Даташиты
SBP13007D
Fig. 1 DC Current Gain
Fig. 2 Saturation Voltage
Fig. 3 Power Derating
Fig. 4 Safe Operation Area
Fig. 5 Collect output capacitance
www.DataSheet4U.com
3/4










Скачать PDF:

[ SBP13007D.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
SBP13007-H1High Voltage Fast-Switching NPN Power TransistorSemiWell Semiconductor
SemiWell Semiconductor
SBP13007-H2High Voltage Fast-Switching NPN Power TransistorSemiWell Semiconductor
SemiWell Semiconductor
SBP13007-OHigh Voltage Fast-Switching NPN Power TransistorWINSEMI SEMICONDUCTOR
WINSEMI SEMICONDUCTOR
SBP13007-XHigh Voltage Fast-Switching NPN Power TransistorWINSEMI SEMICONDUCTOR
WINSEMI SEMICONDUCTOR

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск