6N40 PDF даташит
Спецификация 6N40 изготовлена «Unisonic Technologies» и имеет функцию, называемую «400 Volts N-CHANNEL POWER MOSFET». |
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Детали детали
Номер произв | 6N40 |
Описание | 400 Volts N-CHANNEL POWER MOSFET |
Производители | Unisonic Technologies |
логотип |
6 Pages
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6N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
6 Amps, 400 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 6N40 is an N-Channel enhancement mode Power
FET using UTC’s perfect planar stripe, DMOS technology to
provide customers with superior switching performance and
minimum on-state resistance. It also can withstand high energy
pulse in the avalanche and commutation mode.
The UTC 6N40 is generally used in applications , such as
electronic lamp ballasts based on half bridge topology and high
efficiency switched mode power supplies.
FEATURES
* 6A, 400V, RDS(ON)=1.0Ω @ VGS=10V
* Fast switching speed
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
6N40L-TF3-T
6N40G-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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6N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400 V
Gate-Source Voltage
VGSS
±30 V
Avalanche Current (Note 1)
Drain Current
Continuous
Pulsed (Note 1)
IAR
ID
IDM
6
6 (Note 6)
24(Note 6)
A
A
A
Avalanche Energy
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS
EAR
270 mJ
7.3 mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5 V/ns
Power Dissipation
Junction Temperature
PD 38 W
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
3.31
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N40
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient
ΔBVDSS/ΔTJ
ID=250μA,
Referenced
to
25°C
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
IDSS
VDS=400V, VGS=0V
VDS=320V, TJ=125°C
IGSS
VDS=0V ,VGS=+30V
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=3A
VDS=40V, ID=3A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=320V, VGS=10V, ID=6A
(Note 4,5)
VDD=200V, ID=6A, RG=25Ω
(Note 4,5)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =6A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR VGS=0V, IS=6A,
QRR dIF/dt=100A/μs (Note 4)
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=13.7mH, IAS=6A, VDD= 50V, RG=25Ω, Starting TJ=25°C
3. ISD ≤6A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
6. Drain current limited by maximum junction temperature
MIN
400
2.0
TYP MAX UNIT
V
0.54 V/°C
1
10
+100
-100
µA
µA
nA
nA
4.0
0.83 1
4.7
V
Ω
S
480 625
80 105
15 20
pF
pF
pF
16 20 nC
2.3 nC
8.2 nC
13 35 ns
65 140 ns
21 55 ns
38 85 ns
6
24
1.4
230
1.7
A
A
V
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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