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6N40 PDF даташит

Спецификация 6N40 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «400 Volts N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 6N40
Описание 400 Volts N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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6N40 Даташит, Описание, Даташиты
6N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
6 Amps, 400 Volts
N-CHANNEL POWER MOSFET
„ DESCRIPTION
The UTC 6N40 is an N-Channel enhancement mode Power
FET using UTC’s perfect planar stripe, DMOS technology to
provide customers with superior switching performance and
minimum on-state resistance. It also can withstand high energy
pulse in the avalanche and commutation mode.
The UTC 6N40 is generally used in applications , such as
electronic lamp ballasts based on half bridge topology and high
efficiency switched mode power supplies.
„ FEATURES
* 6A, 400V, RDS(ON)=1.0@ VGS=10V
* Fast switching speed
* Improved dv/dt capability
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
6N40L-TF3-T
6N40G-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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6N40 Даташит, Описание, Даташиты
6N40
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400 V
Gate-Source Voltage
VGSS
±30 V
Avalanche Current (Note 1)
Drain Current
Continuous
Pulsed (Note 1)
IAR
ID
IDM
6
6 (Note 6)
24(Note 6)
A
A
A
Avalanche Energy
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS
EAR
270 mJ
7.3 mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5 V/ns
Power Dissipation
Junction Temperature
PD 38 W
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
3.31
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N40 Даташит, Описание, Даташиты
6N40
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient
ΔBVDSS/ΔTJ
ID=250μA,
Referenced
to
25°C
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
IDSS
VDS=400V, VGS=0V
VDS=320V, TJ=125°C
IGSS
VDS=0V ,VGS=+30V
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=3A
VDS=40V, ID=3A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=320V, VGS=10V, ID=6A
(Note 4,5)
VDD=200V, ID=6A, RG=25
(Note 4,5)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =6A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR VGS=0V, IS=6A,
QRR dIF/dt=100A/μs (Note 4)
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=13.7mH, IAS=6A, VDD= 50V, RG=25, Starting TJ=25°C
3. ISD 6A, di/dt 200A/μs, VDD BVDSS, Starting TJ=25°C
4. Pulse Test : Pulse width 300μs, Duty cycle 2%
5. Essentially independent of operating temperature
6. Drain current limited by maximum junction temperature
MIN
400
2.0
TYP MAX UNIT
V
0.54 V/°C
1
10
+100
-100
µA
µA
nA
nA
4.0
0.83 1
4.7
V
S
480 625
80 105
15 20
pF
pF
pF
16 20 nC
2.3 nC
8.2 nC
13 35 ns
65 140 ns
21 55 ns
38 85 ns
6
24
1.4
230
1.7
A
A
V
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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