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CDBB540-G PDF даташит

Спецификация CDBB540-G изготовлена ​​​​«Comchip Technology» и имеет функцию, называемую «(CDBB540-G - CDBB5100-G) SMD Schottky Barrier Rectifiers».

Детали детали

Номер произв CDBB540-G
Описание (CDBB540-G - CDBB5100-G) SMD Schottky Barrier Rectifiers
Производители Comchip Technology
логотип Comchip Technology логотип 

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CDBB540-G Даташит, Описание, Даташиты
SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
CDBB540-G Thru. CDBB5100-G
Reverse Voltage: 40,60,100 Volts
Forward Current: 5.0 Amp
RoHS Device
Features
-Batch process design, excellent powe
dissipation offers better reverse leakage
current and thermal resistance.
-Low profile surface mounted application
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage dorp.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
Mechanical data
-Case: Molded plastic, JEDEC SMB.
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight:0.09 gram(approx.).
SMB-1
0.213(5.4)
0.197(5.0)
0.016(0.4) Typ.
0.142(3.6)
0.126(3.2)
0.040(1.0) Typ.
0.168(4.2)
0.150(3.8)
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings(at TA=25°C unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Maximum RMS voltage
Continuous reverse voltage
Maximum forward voltage @IF=1.0A
Symbol
VRRM
VRMS
VR
VF
CDBB540-G
40
28
40
0.55
CDBB560-G
60
42
60
0.75
CDBB5100-G
100
70
100
0.85
Forward rectified current
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
Reverse current on VR=VRRM @TA=25°C
@TA=125°C
Typ. thermal resistance, junction to ambient air
IO
IFSM
IR
RθJA
5.0
150
0.5
50
12
Typ. diode junction capacitance (Note 1)
CJ
380
Operating junction temperature
TJ -55 to +125
-55 to +150
Storage temperature
TSTG
-65 to +175
Note 1: f=1MHz and applied 4V DC reverse voltage.
www.DataSheet4U.net
QW-BB028
Comchip Technology CO., LTD.
Unit
V
V
V
V
A
A
mA
°C/W
pF
°C
°C
REV:A
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CDBB540-G Даташит, Описание, Даташиты
SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
Rating and Characteristic Curves (CDBB540-G Thru. CDBB5100-G)
Fig.1 Reverse Characteristics
100
10
Fig.2 Forward Characteristics
100
10 CDBB560-G CDBB5100-G
1
TJ=75°C
0.1
TJ=25°C
0.01
0
40 80 120 160 200
Percent of Rated Peak Reverse Voltage (%)
1
0.1
0.01
0.1
0.5 0.9 1.3 1.7
VF, Forward Voltage (V)
2.1
Fig.3 Junction Capacitance
1400
1200
1000
800
600
400
200
0
0.01
f=1MHz
Applied 4VDC
reverse voltage
0.1 1 10
VR, Reverse Voltage (V)
100
Fig.4 Current Derating Curve
7
6
5
4
3
2
1
0
20 40 60 80 100 120 140 160
TA, Ambient Temperature (°C)
Fig.5 Non-repetitive Forward
Surge Current
150
TJ=25°C
8.3ms single half sine
wave, JEDEC method
120
90
60
30
0
1 10 100
Number of Cycles at 60Hz
QW-BB028
Comchip Technology CO., LTD.
REV:A
Page 2









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CDBB540-G Даташит, Описание, Даташиты
SMD Schottky Barrier Rectifiers
Reel Taping Specification
P0 d
P1 E
Index hole
F
BW
PA
SMD Diodes Specialist
T
C
D2 D1 D
Trailer
Device
W1
Leader
....... .......
....... .......
End ....... ....... ....... .......
10 pitches (min)
10 pitches (min)
Start
Direction of Feed
SMB
SYMBOL
(mm)
(inch)
A
3.81 ± 0.10
0.150 ± 0.04
B
5.74 ± 0.10
0.226 ± 0.04
C
2.24 ± 0.10
0.088 ± 0.04
d
1.50 ± 0.10
0.059 ± 0.004
D
330 ± 2.00
12.99 ± 0.079
D1
50.0 MIN.
1.969 MIN.
D2
13.0 ± 0.50
0.512 ± 0.020
SYMBOL
E
F
P P0 P1 T
W W1
SMB
(mm)
1.75 ± 0.10 5.50 ± 0.10 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 0.23 ± 0.10 12.0 ± 0.30 18.0 ± 1.00
(inch)
0.689 ± 0.004 0.217 ± 0.004 0.315± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.009 ± 0.004 0.472 ± 0.012 0.709 ± 0.040
QW-BB028
Comchip Technology CO., LTD.
REV:A
Page 3










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Номер в каталогеОписаниеПроизводители
CDBB540-G(CDBB540-G - CDBB5100-G) SMD Schottky Barrier RectifiersComchip Technology
Comchip Technology

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