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2SB947A PDF даташит

Спецификация 2SB947A изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «Power Transistors».

Детали детали

Номер произв 2SB947A
Описание Power Transistors
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

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2SB947A Даташит, Описание, Даташиты
Power Transistors
2SB0947 (2SB947), 2SB0947A (2SB947A)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For low-voltage switcing
Features
Low collector-emitter saturation voltage VCE(sat)
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB0947 VCBO
2SB0947A
40
50
Collector-emitter voltage 2SB0947 VCEO
(Base open)
2SB0947A
20
40
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
5
10
15
35
2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB0947 VCEO
2SB0947A
IC = −10 mA, IB = 0
20
40
V
Collector-base cutoff
current (Emitter open)
2SB0947 ICBO
2SB0947A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
IEBO
hFE1
hFE2 *
VCE(sat)
VBE(sat)
fT
Cob
VCB = −40 V, IE = 0
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
VCE = −2 V, IC = − 0.1 A
VCE = −2 V, IC = −2 A
IC = −7 A, IB = − 0.23 A
IC = −7 A, IB = − 0.23 A
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
VCB = −10 V, IE = 0, f = 1 MHz
45
60
50 µA
50
50 µA
260
0.6 V
1.5 V
150 MHz
200 pF
Turn-on time
Storage time
Fall time
ton IC = −2 A, IB1 = −66 mA, IB2 = 66 mA
tstg VCC = −20 V
tf
0.1
0.5
0.1
µs
µs
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00026BED
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2SB947A Даташит, Описание, Даташиты
2SB0947, 2SB0947A
PC Ta
50
(1)TC=Ta
(2)With a 100×100×2mm
Al heat sink
40 (3)With a 50×50×2mm
Al heat sink
(4)Without heat sink
(PC=2W)
30
(1)
20
10
(2)
(3)
(4)
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
12
TC=25˚C
IB=–160mA
10
–100mA
8 –80mA
6 –60mA
–40mA
4 –30mA
–20mA
2 –10mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
10
IC/IB=30
1
0.1
TC=100˚C
25˚C
–25˚C
0.01
0.1
1 10
Collector current IC (A)
VBE(sat) IC
10 IC/IB=30
1
0.1
TC=–25˚C
25˚C
100˚C
hFE IC
104
VCE=–2V
103
TC=100˚C
102 –25˚C
25˚C
10
fT IC
104
VCE=–10V
f=10MHz
TC=25˚C
103
102
10
0.01
0.1
1 10
Collector current IC (A)
1
0.1
1
10 100
Collector current IC (A)
1
0.01
0.1
1
Collector current IC (A)
10
Cob VCB
104
f=1MHz
TC=25˚C
103
102
10
ton, tstg, tf IC
10
Pulsed tw=1ms
Duty cycle=1%
IC/IB=30
(–IB1=IB2)
VCC=–20V
TC=25˚C
1
tstg
ton
0.1
tf
Safe operation area
100
Non repetitive pulse
TC=25˚C
ICP
10 IC
t=10ms
t=1ms
DC
1
0.1
1
0.1
1
10 100
Collector-base voltage VCB (V)
0.01
0
2 4 6
Collector current IC (A)
8
0.01
0.1
1
10 100
Collector-emitter voltage VCE (V)
2 SJD00026BED









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2SB947A Даташит, Описание, Даташиты
Rth t
103
(1)Without heat sink
(2)With a 100×100×2mm Al heat sink
102 (1)
(2)
10
1
101
102
104
103
102
101
1
10 102 103 104
Time t (s)
2SB0947, 2SB0947A
SJD00026BED
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