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PDF NTMS5835NL Data sheet ( Hoja de datos )
| Número de pieza | NTMS5835NL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMS5835NL
Power MOSFET
40 V, 12 A, 10 mW
Features
• Low RDS(on)
• Low Capacitance
www.Data•SheOetp4tUi.mneitzed Gate Charge
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Pulsed Drain
Current
TA = 25°C
Steady
State
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
t ≤10 s
TA = 70°C
TA = 25°C
TA = 70°C
tp = 10 ms
VDSS
VGS
ID
PD
ID
PD
IDM
40
±20
9.2
7.4
1.5
1.0
12
9.6
2.6
1.6
48
Unit
V
V
A
W
A
W
A
Operating Junction and Storage
Temperature
TJ, TSTG −55 to
+150
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 40 V, VGS = 10 V,
L = 0.1 mH)
IS
EAS
IAS
20 A
69 mJ
37 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient Steady State (Note 1)
RqJA
82
Junction−to−Ambient − t ≤10 s (Note 1)
Junction−to−Foot (Drain) (Note 1)
RqJA
RqJF
49
21 °C/W
Junction−to−Ambient Steady State (Note 2)
RqJA
121
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm2) pad size.
http://onsemi.com
V(BR)DSS
40 V
RDS(ON) MAX
10 mW @ 10 V
14 mW @ 4.5 V
D
ID MAX
12 A
G
S
N−CHANNEL MOSFET
8
1
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMS5835NLR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
April, 2011 − Rev. 1
1
Publication Order Number:
NTMS5835NL/D
1 page  
NTMS5835NL
TYPICAL PERFORMANCE CURVES
100
D = 0.5
0.2
10 0.1
0.05
0.02
1
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 13. Thermal Response
1
10 100 1000
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTMS5835NL.PDF ] | |
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