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PDF GT40T302 Data sheet ( Hoja de datos )
| Número de pieza | GT40T302 | |
| Descripción | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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GT40T302
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T302
Parallel Resonance Inverter Switching Applications
Unit: mm
• FRD included between emitter and collector
• Enhancement mode
• High speed IGBT: tf = 0.23 μs (typ.) (IC = 40 A)
FRD: trr = 0.7 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Diode forward current
DC
1 ms
DC
1 ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
1500
±25
40
80
30
80
200
150
−55 to 150
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
Marking
Gate
Collector
Emitter
TOSHIBA
GT40T302
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead(Pb)-Free Finish
www.DataSheet4U.net
1 2008-12-26
1 page  
101
100
10−1
Rth (t) – tw
Diode
IGBT
10−2
10−130−5
10−4
Tc = 25°C
10−3 10−2 10−1 100 101 102
Pulse width tw (s)
GT40T302
100
80
60
40
20
0
0
IF – VF
Common collector
Tc = 40°C
25
125
1234
Forward voltage VF (V)
5
2.5 20
2.0 16
1.5 12
1.0 8
0.5 4
Irr, trr – IF
Common collector
di/dt = −20 A/μs
Tc = 25°C
Irr
trr
00
0 20 40 60 80 100
Forward current IF (A)
1.0 50
0.8 40
0.6 30
0.4 20
Irr, trr – di/dt
Common collector
IF = 30 A
Tc = 25°C
trr
0.2 10
Irr
00
0 -20 -40 -60 -80 -100 -120
di/dt (A/μs)
5 2008-12-26
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT40T302.PDF ] | |
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