B12NM50 PDF даташит
Спецификация B12NM50 изготовлена «STMicroelectronics» и имеет функцию, называемую «STB12NM50». |
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Детали детали
Номер произв | B12NM50 |
Описание | STB12NM50 |
Производители | STMicroelectronics |
логотип |
17 Pages
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STP12NM50 - STP12NM50FP
STB12NM50 - STB12NM50-1
N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK
MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
STB12NM50
STB12NM50-1
STP12NM50
STP12NM50FP
550V
550V
550V
550V
RDS(on)
<0.35Ω
<0.35Ω
<0.35Ω
<0.35Ω
ID
12A
12A
12A
12A
■ High dv/dt and avalanche capabilities
■ Low input capacitance and gate charge
■ 100% avalanche tested
■ Low gate input resistance
■ Tight process control and high manufacturing
yields
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
Internal schematic diagram
Order codes
Part number
STB12NM50T4
STB12NM50-1
STP12NM50
STP12NM50FP
Marking
B12NM50
B12NM50
P12NM50
P12NM50FP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
Tube
July 2006
Rev 11
1/17
www.st.com
17
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Contents
Contents
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
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STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
ID
ID
IDM(2)
PTOT
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
VISO
dv/dt(3)
Insulation winthstand voltage (DC)
Peak diode recovery voltage slope
TJ Operating junction temperature
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤12A, di/dt ≤400A/µs, VDD =80%V(BR)DSS
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Value
TO-220-
/D²PAK/I²PAK
Unit
TO-220FP
± 30
12
7.5
48
160
1.28
--
15
12(1)
7.5(1)
48(1)
35
0.28
2500
V
A
A
A
W
W/°C
V
V/ns
-65 to 150
°C
Value
TO-220/D²PAK/
I² PAK
Unit
TO-220FP
0.78
62.5
3.57 °C/W
°C/W
300 °C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Iar, Vdd=50V)
Value
6
400
Unit
A
mJ
3/17
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