NTMD5838NL PDF даташит
Спецификация NTMD5838NL изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTMD5838NL |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NTMD5838NL
Power MOSFET
40 V, 8.9 A, 25 mW, Dual N−Channel SO−8
Features
• Low RDS(on)
• Low Capacitance
• Optimized Gate Charge
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Pulsed Drain
Current
TA = 25°C
Steady
State
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
t ≤10 s
TA = 70°C
TA = 25°C
TA = 70°C
tp = 10 ms
VDSS
VGS
ID
PD
ID
PD
IDM
40
±20
7.4
5.9
2.1
1.3
8.9
7.1
3.0
1.9
35
Unit
V
V
A
W
A
W
A
Operating Junction and Storage
Temperature
TJ, TSTG −55 to
+150
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
IS
EAS
IAS
7.0 A
20 mJ
21 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient Steady State
(Notes 1 & 3)
RqJA
58
Junction−to−Ambient − t ≤10 s (Note 1)
RqJA
40 °C/W
Junction−to−Ambient Steady State (Note 2)
RqJA
106
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm2) pad size.
3. Both channels receive equivalent power dissipation
1 W applied on each channel: TJ = 2 W * 58°C/W + 25°C = 141°C
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V(BR)DSS
40 V
RDS(ON) MAX
25 mW @ 10 V
30.8 mW @ 4.5 V
ID MAX
8.9 A
N−CHANNEL MOSFET
DD
GG
SS
MARKING DIAGRAM/
PIN ASSIGNMENT
D1 D1 D2 D2
8
SO−8
CASE 751
STYLE 11
D5838N
AYWW
G
1
S1 G1 S2 G2
(Top View)
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMD5838NLR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
www.Dat©aSSheemeitc4oUnd.uncetotr Components Industries, LLC, 2011
April, 2011 − Rev. 0
1
Publication Order Number:
NTMD5838NL/D
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NTMD5838NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 40 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 7 A
VGS = 4.5 V, ID = 7 A
VDS = 15 V, ID = 7 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 20 V
VGS = 10 V, VDS = 20 V; ID = 7 A
Min
40
1.0
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS (Note 5)
QG(TH)
QGS
QGD
VGP
RG
VGS = 4.5 V, VDS = 20 V; ID = 7 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 20 V,
ID = 7 A, RG = 2.5 W
Forward Diode Voltage
VSD
VIGSS==70AV,
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 7 A
Reverse Recovery Charge
QRR
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
Typ Max Unit
V
32 mV/°C
1.0
100
±100
mA
nA
1.8 3.0
V
6.0 mV/°C
20.5 25
25.0 30.8
mW
4.0 S
785
123
90
17
8.6 11
0.8
2.8
4.0
3.2
1.8
pF
nC
V
W
11
23
17 ns
4.0
0.84 1.2
0.7
17
11
6.0
10
V
ns
nC
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NTMD5838NL
TYPICAL PERFORMANCE CURVES
50
10 V
40
30
5.5 V
7.5 V
4.4 V TJ = 25°C
4V
50
VDS ≥ 5 V
40
30
20 3.6 V
10
3V
0
01234
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
0.06
0.05
TJ = 25°C
ID = 7 A
0.04
20
TJ = 125°C
10 TJ = 25°C
TJ = −55°C
0
52 3 4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.035
TJ = 25°C
0.025
VGS = 4.5 V
0.03
0.02
0.015
VGS = 10 V
5
0.01
2 3 4 5 6 7 8 9 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.005
2 6 10 14 18
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
VGS = 4.5 V
1.4 ID = 7 A
1.2
100000
VGS = 0 V
10000
TJ = 150°C
1
1000
TJ = 125°C
0.8
0.6
−50
−25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
100
5
15 25 35
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTMD5838NL | Power MOSFET ( Transistor ) | ON Semiconductor |
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