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CDBFN160-G PDF даташит

Спецификация CDBFN160-G изготовлена ​​​​«Comchip Technology» и имеет функцию, называемую «(CDBFN120-G - CDBFN1100-G) SMD Schottky Barrier Rectifiers».

Детали детали

Номер произв CDBFN160-G
Описание (CDBFN120-G - CDBFN1100-G) SMD Schottky Barrier Rectifiers
Производители Comchip Technology
логотип Comchip Technology логотип 

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CDBFN160-G Даташит, Описание, Даташиты
SMD Schottky Barrier Rectifiers
CDBFN120-G Thru CDBFN1100-G
Voltage: 20 to 100 Volts
Current: 1.0 Amp
RoHS Device
SMD Diodes Specialist
Features
SOD-323
-Batch process design, excellent powe
dissipation offers better reverse leakage
current .
-Low profile surface mounted application
in order to optimize board space.
0.106 (2.70)
0.091 (2.3)
0.012(0.3) Typ.
-Low power loss, high efficiency.
-High current capability, low forward voltage
dorp.
-High surge capability.
0.057 (1.45)
0.041 (1.05)
-Guardring for overvoltage protection.
-Very iny plastic SMD package.
-Ultra high-speed switching.
-Silicon epitaxial planarchip, metal silicon
junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
Mechanical data
0.016(0.4) Typ.
0.047 (1.2)
0.031 (0.8)
0.016(0.4) Typ.
-Case: JEDEC SOD-323, Molded plastic
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight:0.008 gram(approx.).
Maximum Ratings(at TA=25
Dimensions in inches and (millimeter)
OC unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Symbol
CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN
120-G 130-G 140-G 150-G 160-G 180-G 1100-G
Unit
VRRM 20 30 40 50 60 80 100 V
Maximum RMS voltage
VRMS 14 21 28 35 42 56 70 V
Continuous reverse voltage
VR 20 30 40 50 60 80 100 V
Maximum forward voltage @IF=1.0A
VF 0.55
0.70 0.85 V
Forward rectified current
IO
1.0 A
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
Reverse current on VR=VRRM
O
@TA=25 C
O
@TA=125 C
Typ. thermal resistance, junction to ambient air
IFSM
IR
RθJA
30 A
0.5
10
mA
90 OC/W
Typ. diode junction capacitance (Note 1)
CJ
120 pF
Operating junction temperature
TJ -55 to +125
-55 to +150
OC
Storage temperature
Note 1: f=1MHz and applied 4V DC reverse voltage.
TSTG
-65 to +150
OC
www.DQatWaS-BhBe0e2t42U.net
Comchip Technology CO., LTD.
REV:D
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CDBFN160-G Даташит, Описание, Даташиты
SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
Ratings and Characteristic Curves(CDBFN120-G Thru CDBFN1100-G)
Fig.1 Typical Forward Current
Derating Curve
1.3
1.0
0.5
0
0 50 100 150 200
O
TA, Ambient TemperatureC()
Fig.2 Typical Forward Characteristics
100
10
1
CDBFN1C2D0B-GFC~NCD1DB50FB-NFGN1~81C-04D-0GB-G~FCND1B60F-NG1100-G
0.1
0.01
0.1
TJ=25 OC
Pulse width 300μs
1% duty cycle
0.3 0.5 0.7 0.9 1.1 1.3
VF, Forward Voltage (V)
1.5
Fig.3 Maximum Non-repetitive Peak
Forward Surge Current
30
TJ=25 OC
8.3ms single half
sine wave, JEDEC
24 method
18
12
6
0
1 10 100
Number of Cycles at 60Hz
Fig.4 Typical Junction Capacitance
350
300
250
200
150
100
50
0
0.01
0.1 1 10
VR, Reverse Voltage (V)
100
Fig.5 Typical Reverse Characteristics
100
10
1
TJ=75 OC
0.1
TJ=25 OC
0.01
0 20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
QW-BB022
Comchip Technology CO., LTD.
REV:D
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CDBFN160-G Даташит, Описание, Даташиты
SMD Schottky Barrier Rectifiers
Reel Taping Specification
P0 d
P1 E
Index hole
F
BW
Polarity
PA
SMD Diodes Specialist
T
C
D2 D1 D
Trailer
Device
W1
Leader
....... .......
....... .......
End ....... ....... ....... .......
10 pitches (min)
10 pitches (min)
Start
Direction of Feed
SOD-323
SYMBOL
(mm)
(inch)
A
1.47 ± 0.10
0.057 ± 0.004
B
2.95± 0.10
0.116 ± 0.004
C
1.15 ± 0.10
0.045 ± 0.004
d
1.50 ± 0.10
0.059 ± 0.004
D
178 ± 1
7.008 ± 0.040
D1
62.0 MIN.
2.44 MIN.
D2
13.0 ± 0.20
0.512 ± 0.008
SOD-323
SYMBOL
(mm)
(inch)
E
1.75 ± 0.10
0.069 ± 0.004
F
3.50 ± 0.05
0.138 ± 0.002
P
4.00 ± 0.10
0.157 ± 0.004
P0
4.00 ± 0.10
0.157 ± 0.004
P1
2.00 ± 0.05
0.079 ± 0.002
W
8.00 ± 0.30
0.315 ± 0.012
W1
11.4 MAX.
0.449 MAX
QW-BB022
Comchip Technology CO., LTD.
REV:D
Page 3










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