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80NF70 PDF даташит

Спецификация 80NF70 изготовлена ​​​​«ST Microelectronics» и имеет функцию, называемую «STP80NF70».

Детали детали

Номер произв 80NF70
Описание STP80NF70
Производители ST Microelectronics
логотип ST Microelectronics логотип 

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80NF70 Даташит, Описание, Даташиты
STP80NF70
N-channel 68 V, 0.0082 , 98 A, TO-220
STripFET™ II Power MOSFET
Features
Type
STP80NF70
VDSS
68 V
RDS(on)
max
< 0.0098
ID
98 A
Exceptional dv/dt capability
100% avalanche tested
Application
Switching applications
Description
The STP80NF70 is a N-channel Power MOSFET
realized with STMicroelectronics unique
STripFET™ process. It has specifically been
designed to minimize input capacitance and gate
charge. The device is therefore suitable in
advanced high-efficiency switching applications.
3
2
1
TO-220
Figure 1. Internal schematic diagram
$4!"OR
'
3
3#
Table 1. Device summary
Order code
STP80NF70
Marking
80NF70
Package
TO-220
Packaging
Tube
June 2010
www.DataSheet4U.net
Doc ID 17610 Rev 1
1/13
www.st.com
13









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80NF70 Даташит, Описание, Даташиты
Contents
Contents
STP80NF70
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 17610 Rev 1









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80NF70 Даташит, Описание, Даташиты
STP80NF70
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC=100 °C
IDM(1) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
dv/dt (2) Peak diode recovery voltage slope
EAS (3) Single pulse avalanche energy
Tstg Storage temperature
TJ Operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD 80 A, di/dt 300 A/µs, VDD V(BR)DSS, TJ TJMAX.
3. Starting TJ = 25 oC, ID = 40 A, VDD = 34 V.
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose(1)
1. 1.6 mm from case for 10 sec.
Electrical ratings
Value
68
± 20
98
68
392
190
1.27
13
700
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
0.79
62.5
300
Unit
°C/W
°C/W
°C
Doc ID 17610 Rev 1
3/13










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Номер в каталогеОписаниеПроизводители
80NF70STP80NF70ST Microelectronics
ST Microelectronics
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