80NF70 PDF даташит
Спецификация 80NF70 изготовлена «ST Microelectronics» и имеет функцию, называемую «STP80NF70». |
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Детали детали
Номер произв | 80NF70 |
Описание | STP80NF70 |
Производители | ST Microelectronics |
логотип |
13 Pages
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STP80NF70
N-channel 68 V, 0.0082 Ω, 98 A, TO-220
STripFET™ II Power MOSFET
Features
Type
STP80NF70
VDSS
68 V
RDS(on)
max
< 0.0098 Ω
ID
98 A
■ Exceptional dv/dt capability
■ 100% avalanche tested
Application
■ Switching applications
Description
The STP80NF70 is a N-channel Power MOSFET
realized with STMicroelectronics unique
STripFET™ process. It has specifically been
designed to minimize input capacitance and gate
charge. The device is therefore suitable in
advanced high-efficiency switching applications.
3
2
1
TO-220
Figure 1. Internal schematic diagram
$ 4!" OR
'
3
3#
Table 1. Device summary
Order code
STP80NF70
Marking
80NF70
Package
TO-220
Packaging
Tube
June 2010
www.DataSheet4U.net
Doc ID 17610 Rev 1
1/13
www.st.com
13
No Preview Available ! |
Contents
Contents
STP80NF70
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 17610 Rev 1
No Preview Available ! |
STP80NF70
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC=100 °C
IDM(1) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
dv/dt (2) Peak diode recovery voltage slope
EAS (3) Single pulse avalanche energy
Tstg Storage temperature
TJ Operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX.
3. Starting TJ = 25 oC, ID = 40 A, VDD = 34 V.
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose(1)
1. 1.6 mm from case for 10 sec.
Electrical ratings
Value
68
± 20
98
68
392
190
1.27
13
700
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
0.79
62.5
300
Unit
°C/W
°C/W
°C
Doc ID 17610 Rev 1
3/13
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