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PDF SCF6C60 Data sheet ( Hoja de datos )

Número de pieza SCF6C60
Descripción Silicon Controlled Rectifiers
Fabricantes SemiWell Semiconductor 
Logotipo SemiWell Semiconductor Logotipo



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No Preview Available ! SCF6C60 Hoja de datos, Descripción, Manual

SemiWell Semiconductor
SCF6C60
Silicon Controlled Rectifiers
Symbol
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 6 A )
Low On-State Voltage (1.4V(Typ.)@ ITM)
Isolation Voltage ( VISO = 1500V AC )
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor
control circuit in power tool, inrush current limit circuit and heating
control system.
2. Anode
TO-220F
1
23
3. Gate
1. Cathode
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Half Sine Wave : TC = 100 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
di/dt Critical rate of rise of on-state current
PGM
PG(AV)
IFGM
VRGM
VISO
TJ
TSTG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
A.C. 1 minute
Ratings
600
3.8
6
66
21
50
5
0.5
2
5.0
1500
- 40 ~ 125
- 40 ~ 150
Aug, 2003. Rev. 1
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
Units
V
A
A
A
A2s
A/
W
W
A
V
V
°C
°C
1/5
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SCF6C60 pdf
SCF6C60
TO-220F Package Dimension
Dim.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
φ
φ1
φ2
Min.
10.4
6.18
9.55
13.47
6.05
1.26
3.17
1.87
2.57
2.51
1.25
0.45
0.6
mm
Typ.
2.54
5.08
3.7
3.2
1.5
Max.
10.6
6.44
9.81
13.73
6.15
1.36
3.43
2.13
2.83
2.62
1.55
0.63
1.0
Min.
0.409
0.243
0.376
0.530
0.238
0.050
0.125
0.074
0.101
0.099
0.049
0.018
0.024
Inch
Typ.
0.100
0.200
0.146
0.126
0.059
Max.
0.417
0.254
0.386
0.540
0.242
0.054
0.135
0.084
0.111
0.103
0.061
0.025
0.039
F
B
A
E
HI
φ
C
G
D
L
1
2
3
J
K
N
φ1
φ2
M
O
1. Cathode
2. Anode
3. Gate
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