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PDF HP142TS Data sheet ( Hoja de datos )
| Número de pieza | HP142TS | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | SHANTOU HUASHAN ELECTRONIC DEVICES | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HP142TS (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN DARLINGTON TRANSISTOR
HP142TS
█ APPLICATIONS
High DC Current Gain
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation（Tc=25℃）…………………… 70W
VCBO——Collector-Base Voltage…………………………… 100V
VCEO——Collector-Emitter Voltage………………………… 100V
VEBO——Emitter-Base Voltage……………………………… 5V
IC——Collector Current（DC）……………………………… 8A
IB——Base Current……………………………………………0.5A
TO-220
1―Base，B
2―Collector，C
3―Emitter, E
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
BVCEO(SUS)
ICEO
ICBO
IEBO
HFE（1）
HFE（2）
VCE(sat1)
VCE(sat2)
VBE(sat)
VBE(on)
tD
tR
tS
tF
Characteristics
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Base- Emitter On Voltage
Deiay time
Rise Time
Storage Time
Fall Time
Min Typ Max
100
1000
1000
0.15
2
1
2
2
3
3.5
3
0.55
2.5
2.5
Unit
V
mA
mA
mA
V
V
V
V
uS
uS
uS
uS
Test Conditions
IC=30mA, IB=0
VCE=50V, IB=0
VCB=100V, IE=0
VEB=5V, IC=0
VCE=4V, IC=0.5A
VCE=4V, IC=3A
IC=5A, IB=10mA
IC=10A, IB=40mA
IC=10A, IB=40mA
VCE=4V,IC=10A,
Vcc=30V,Ic=5A
IB1=20mA
IB2=-20mA
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet HP142TS.PDF ] | |
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