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PDF HFT150-50 Data sheet ( Hoja de datos )
| Número de pieza | HFT150-50 | |
| Descripción | N-Channel Enhancement Mode HF POWER MOSFET | |
| Fabricantes | ASI | |
| Logotipo |  |
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HFT150-50
HF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The HFT150-50 is Designed for
General Purpose Class B Power
Amplifier Applications Up to 100 MHz.
FEATURES:
• PG = 20 dB Typ. at 150 W/30 MHz
• η D = 50% Typical at 150 W/30 MHz
• Omnigold™ Metalization
MAXIMUM RATINGS
ID
VDSS
VGS
PDISS
TJ
T STG
θ JC
16 A
125 V
± 30 V
300 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.6 OC/W
PACKAGE STYLE .500 4L FLG
.112x45° L
A
FULL R
S
D
C
B
G
S
E
H
D
G
F
Ø.125 NOM.
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .220 / 5.59
.230 / 5.84
B .125 / 3.18
C .245 / 6.22
.255 / 6.48
D .720 / 18.28
.7.30 / 18.54
E .125 / 3.18
F .970 / 24.64
.980 / 24.89
G .495 / 12.57
.505 / 12.83
H .003 / 0.08
.007 / 0.18
I .090 / 2.29
.110 / 2.79
J .150 / 3.81
.175 / 4.45
K
L .980 / 24.89
.280 / 7.11
1.050 / 26.67
ORDER CODE: ASI10617
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
V(BR)DSS
IDSS
IGSS
VGS(th)
gfs
ID = 50 mA
VDSS = 50 V
VGS = 20 V
VDS = 10 V
VDS = 10 V
VGS = 0 V
VGS = 0 V
VDS = 0 V
ID = 100 mA
ID = 5.0 A
NONE
MINIMUM TYPICAL MAXIMUM
125
5.0
1.0
1.0 5.0
3.5
UNITS
V
mA
µA
V
S
Ciss
Coss
Crss
VDS = 50 V
VGS = 0 V
f = 1.0 MHz
300
150
30
pF
Gps VDD = 50 V IDQ = 250 mA POUT = 150W (PEP)
η D FO = 30 & 30.001 MHz
ψ VSWR 30:1 @ all phase angles
16 20
45 50
dB
%
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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