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PDF 2SB1418 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1418 | |
| Descripción | Silicon PNP epitaxial planar type Darlington(For power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SB1418, 2SB1418A
Silicon PNP epitaxial planar type Darlington
For power amplification
Unit: mm
Complementary to 2SD2138 and 2SD2138A
s Features
q High foward current transfer ratio hFE
q High-speed switching
q Allowing automatic insertion with radial taping
s Absolute Maximum Ratings (TC=25˚C)
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
C1.0
2.25±0.2
Parameter
Collector to 2SB1418
base voltage 2SB1418A
Collector to 2SB1418
emitter voltage 2SB1418A
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–60
–80
–60
–80
–5
–4
–2
15
2.0
150
–55 to +150
s Electrical Characteristics (TC=25˚C)
Unit
V
V
V
A
A
W
˚C
˚C
0.55±0.1
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
Internal Connection
C
B
E
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SB1418
current
2SB1418A
Collector cutoff
2SB1418
current
2SB1418A
Emitter cutoff current
Collector to emitter 2SB1418
voltage
2SB1418A
ICBO
ICEO
IEBO
VCEO
VCB = –60V, IB = 0
VCB = –80V, IB = 0
VCE = –30V, IB = 0
VCE = –40V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
–100
–100
µA
–100
–100
µA
–100 µA
–60
V
–80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Turn-off time
hFE1
hFE2*
VBE
VCE(sat)
fT
ton
toff
VCE = –4V, IC = –1A
VCE = –4V, IC = –2A
VCE = –4V, IC = –2A
IC = –2A, IB = –8mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –2A, IB1 = –8mA, IB2 = 8mA,
VCC = –50V
1000
2000
10000
–2.8 V
–2.5 V
20 MHz
0.2 µs
2 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 2000 to 5000 4000 to 10000
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1418.PDF ] | |
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