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PDF GT30J122 Data sheet ( Hoja de datos )
| Número de pieza | GT30J122 | |
| Descripción | 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GT30J122 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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GT30J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J122
4TH GENERATION IGBT
CURRENT RESONANCE INVERTER SWITCHING
APPLICATIONS
Unit: mm
• Enhancement mode type
• High speed: tf = 0.25μs (Typ.) (IC = 50A)
• Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
VCES
VGES
IC
ICP
PC
Tj
Tstg
600
±20
30
100
75
150
−55~150
V
V
A
W
°C
°C
JEDEC
JEITA
―
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-16F1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 5.8 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-01
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
GT30J122
rth (t) – tW
103
Ta = 25°C
102
101
100
10−1
10−2
10−3
10−5
10−4
10−3
10−2
10−1
100
101
102
Pulse width tW (s)
5 2006-11-01
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT30J122.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| GT30J121 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor |
| GT30J122 | 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING | Toshiba Semiconductor |
| GT30J122A | Silicon N-Channel IGBT |  Toshiba |
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