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2SB1607 PDF даташит

Спецификация 2SB1607 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «Silicon PNP epitaxial planar type(For power switching)».

Детали детали

Номер произв 2SB1607
Описание Silicon PNP epitaxial planar type(For power switching)
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

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2SB1607 Даташит, Описание, Даташиты
Power Transistors
2SB1607
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD2469
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
–130
–80
–7
–15
–7
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO VCB = –100V, IE = 0
IEBO VEB = –5V, IC = 0
–10 µA
–50 µA
Collector to emitter voltage
Forward current transfer ratio
VCEO
hFE1
hFE2*
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –3A
–80 V
45
90 260
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = –5A, IB = – 0.25A
IC = –5A, IB = – 0.25A
– 0.5
–1.5
V
V
Transition frequency
Turn-on time
Storage time
Fall time
fT VCE = –10V, IC = – 0.5A, f = 10MHz
ton
tstg IC = –3A, IB1 = – 0.3A, IB2 = 0.3A
tf
30
0.5
1.5
0.1
MHz
µs
µs
µs
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
1









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2SB1607 Даташит, Описание, Даташиты
Power Transistors
PC — Ta
50
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
40 (3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
30
(1)
20
10
(2)
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
–10
TC=25˚C
IB=–120m–A110mA
–8 –100mA
–90mA
–80mA
–70mA
–6 –60mA
–40mA
–4 –30mA
–20mA
–2
–10mA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
2SB1607
–100
–30
–10
VCE(sat) — IC
IC/IB=20
–3
–1
– 0.3
– 0.1
– 0.03
TC=100˚C
–25˚C
25˚C
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
–100
–30
–10
VBE(sat) — IC
IC/IB=20
–3
–1
– 0.3
– 0.1
TC=–25˚C
100˚C
25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
10000
3000
hFE — IC
VCE=–2V
1000
300 TC=100˚C
25˚C
100 –25˚C
30
10
3
1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
10000
3000
1000
fT — IC
VCE=–10V
f=10MHz
TC=25˚C
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
3
1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=10
(–IB1=IB2)
10 VCC=–50V
TC=25˚C
3
1
tstg
0.3
ton
0.1 tf
0.03
0.01
0
–2 –4 –6 –8
Collector current IC (A)
Area of safe operation (ASO)
–100
–30
ICP
–10 IC
–3 10ms
Non repetitive pulse
TC=25˚C
t=0.5ms
1ms
–1 DC
– 0.3
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2









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2SB1607 Даташит, Описание, Даташиты
Power Transistors
103
102
10
Rth(t) — t
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
2SB1607
3










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Номер в каталогеОписаниеПроизводители
2SB1602TRANSISTOR (POWER AMPLIFIER APPLICATIONS)Toshiba Semiconductor
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2SB1603Silicon PNP epitaxial planar type(For low-voltage switching)Panasonic Semiconductor
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2SB1603SILICON POWER TRANSISTORSavantIC
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2SB1603ASilicon PNP epitaxial planar type(For low-voltage switching)Panasonic Semiconductor
Panasonic Semiconductor

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