DataSheet26.com

7N50 PDF даташит

Спецификация 7N50 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «500 Volts N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 7N50
Описание 500 Volts N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

7 Pages
scroll

No Preview Available !

7N50 Даташит, Описание, Даташиты
7N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
7.0A, 500V N-CHANNEL
POWER MOSFET
1
DESCRIPTION
The UTC 7N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 7N50 is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) < 1.0@ VGS=10V, ID=3.5A
* High Switching Speed
* 100% Avalanche Tested
1
1
SYMBOL
2.Drain
Power MOSFET
TO-220
TO-220F1
TO-220F2
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
7N50L-TA3-T
7N50G-TA3-T
7N50L-TF1-T
7N50G-TF1-T
7N50L-TF2-T
7N50G-TF2-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-527.d









No Preview Available !

7N50 Даташит, Описание, Даташиты
7N50
MARKING
Preliminary
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-527.d









No Preview Available !

7N50 Даташит, Описание, Даташиты
7N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
Drain Current
Avalanche Current (Note 2)
Continuous (TC=25°C)
Pulsed (Note 2)
VGSS
ID
IDM
IAR
±30
7 (Note 5)
28 (Note 5)
7
V
A
A
A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 4)
EAS
EAR
270 mJ
8.9 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
TO-220
142 W
Power Dissipation (TC=25°C) TO-220F1
PD
48 W
TO-220F2
50 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 10mH, IAS = 7A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 7A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATINGS
62.5
0.88
2.6
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-527.d










Скачать PDF:

[ 7N50.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
7N50N-Channel MOSFET TransistorInchange Semiconductor
Inchange Semiconductor
7N50500 Volts N-CHANNEL POWER MOSFETUnisonic Technologies
Unisonic Technologies

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск