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160MDS PDF даташит

Спецификация 160MDS изготовлена ​​​​«Naina Semiconductor» и имеет функцию, называемую «Three Phase Bridge Rectifier».

Детали детали

Номер произв 160MDS
Описание Three Phase Bridge Rectifier
Производители Naina Semiconductor
логотип Naina Semiconductor логотип 

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160MDS Даташит, Описание, Даташиты
Naina Semiconductor Ltd.
Features
Easy connections
Excellent power volume ratio
Insulated type
Three – Phase Bridge Rectifier
160MDS
Voltage Ratings (TJ = 250C unless otherwise noted)
Type
number
Voltage
code
VRRM, Max.
repetitive
peak reverse
voltage
(V)
VRSM, Max.
non-
repetitive
peak reverse
voltage
(V)
IRRM
max @
TJ max
(mA)
80 800
900
160MDS
100
120
140
160
1000
1200
1400
1600
1100
1300
1500
1700
10
MDS - 160
Thermal and Mechanical Specifications (TA = 250C unless otherwise noted)
Parameters
Symbol
Maximum operating junction temperature range
Maximum storage temperature range
DC operation per module
TJ
TStg
Maximum thermal
DC operation per junction
resistance, junction to case 120 Rect conduction angle per module
Rth(JC)
120 Rect conduction angle per junction
Maximum thermal
Per module, Mounting surface smooth, flat and
resistance, case to heatsink greased
Rth(CS)
Mounting torque ±10%
to heatsink
to terminal
T
Approximate weight
Values
- 40 to + 150
- 40 to + 150
0.12
0.73
0.15
0.88
0.03
4 to 6
3 to 4
176
Units
0C
0C
0C/W
0C/W
Nm
g
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com









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160MDS Даташит, Описание, Даташиты
Naina Semiconductor Ltd.
160MDS
Electrical Specifications (TJ = 250C unless otherwise noted)
Parameters
Conditions
Maximum DC output current
1200 Rect conduction angle, TC = 850C
Maximum peak one-cycle forward,
non-repetitive surge current
t = 10ms
t = 8.3ms
t = 8.3ms
t = 10ms
No voltage
reapplied
100% VRRM
reapplied
Maximum I2t for fusing
T = 8.3ms
T = 10ms
T = 8.3ms
T = 10ms
No voltage
reapplied
100% VRRM
reapplied
Maximum J2√t for fusing
T = 0.1 to 10ms, no voltage reapplied
TJ = TJ max.
Low level value of threshold voltage [ 16.7% * π * IF(AV) < I < π * IF(AV) ], @ TJ max
High level value of threshold
voltage
Low level value of forward slope
resistance
High level value of forward slope
resistance
[ I > π > IF(AV) ], @ TJ max
[ 16.7% * π * IF(AV) < I < π * IF(AV) ], @ TJ max
[ I > π * IF(AV) ], @ TJ max
Maximum forward voltage drop
Ipk = 100A, tP = 400 µs single junction
Symbol
I0
IFSM
I2t
J2√t
VF(TO)1
VF(TO)2
r1
r2
VFM
Values
160
1430
1500
1200
1260
10200
9300
7200
6600
102000
0.81
1.04
3.52
3.13
1.49
Units
A
A
A2s
A2√s
V
V
mΩ
mΩ
V
RMS isolation voltage
f = 50Hz, t = 1ms, all terminals shorted
VISO 4000 V
Diode Configuration
2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com









No Preview Available !

160MDS Даташит, Описание, Даташиты
Naina Semiconductor Ltd.
160MDS
ALL DIMENSIONS IN MM
3 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com










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Номер в каталогеОписаниеПроизводители
160MDSThree Phase Bridge RectifierNaina Semiconductor
Naina Semiconductor

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