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PDF WM71004 Data sheet ( Hoja de datos )

Número de pieza WM71004
Descripción (WM71004 - WM71016) 4/8/16Kbit Secure F-RAM Memory
Fabricantes Ramtron 
Logotipo Ramtron Logotipo



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No Preview Available ! WM71004 Hoja de datos, Descripción, Manual

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Preliminary
WM71004 / WM71008 / WM71016
4/8/16Kbit Secure F-RAM Memory with
Gen-2 RFID Access
DESCRIPTION
FEATURES
The WM710xx is a RFID transponder IC with
nonvolatile memory employing an advanced
ferroelectric process. A ferroelectric random access
memory, or F-RAM, is nonvolatile and performs
reads and writes like a RAM. It provides reliable data
retention for 20 years while eliminating the
complexities, overhead, and system level reliability
problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM‟s, the WM710xx write operations
are zero power there is no power or speed premium
paid for executing writes into the WM710xx as
compared to read power and speed. Operation of the
memory is fully symmetric: it has an equivalent read
and write range.
The WM710xx‟s RFID interface is compatible with
the EPC Class-1 Generation-2 UHF RFID Protocol
for Communications at 860 MHz 960 MHz,
Version 1.2.0 Specification for RFID Air Interface.
The WM710xx is a two chip configuration offered in
various forms: standard IC package or wafers. All
specifications discussed herein are applicable to the
combined chipset operation.
WM71016
RFID Tag
with F-RAM
RFID
Reader
(Class-1
Gen-2)
Figure 1. System Block Diagram
4/8/16 Kbit Ferroelectric Nonvolatile RAM
Organized as 256/512/1024 x 16 bits
Very High Read/Write Endurance (> 1014)
20-Year Data Retention
Gamma Stability Demonstrated to > 30 kGy
Symmetric Read/Write Operation
Advanced High-Reliability Ferroelectric Process
Interface and Security Features
EPC Class 1 Gen2 (ISO18000-6C) RFID
Compatible Interface (revision 1.2.0)
192-Bit Memory: 96-Bit Electronic Product
Code™ (EPC), 32-Bit Access Password, 32-Bit
KILL Password, 64-Bit TID Memory (Factory
Programmed and Locked)
Inventory, Read, Write and Erase features
Kill Command
Block Permalock Command
Access Command
UHF carrier frequencies from 860 MHz to 960
MHz ISM band, ASK demodulation
Tag-to-reader link frequencies up to 640Kbps
Reader-to-tag asymptotical transmission rates up
to 128Kbps
Supports FM0 and MMS data encoding formats
Custom Features
Stored Address Pointer to Improve Data Write
Speed
Stored Address Pointer Lock
Block Write Command
Variable USER Memory Block Size Support
Ultra Low Power Operation
Memory Read/Write Sensitivity: < -6 dBm (typ.)
Industry Standard Configurations
Industrial Temperature -40C to +85C
Bumped Wafers
8-pin UDFN
This is a product that has fixed target specifications but are
subject to change pending characterization results.
Rev. 1.4
May 2011
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
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WM71004 pdf
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DSPI
Address
0x3DA
0x3DB
0x3DC
0x3DD
0x3DE
0x3EA
0x3EB
0x3EC
0x3ED
0x3EE
0x3F3
0x3F4
0x3F5
0x3F6
0x3F7
0x3F8
0x3F9
0x3FA
0x3FB
0x3FC
0x3FD
0x3FE
0x3FF
Gen-2
Memory Bank
USER
USER
USER
USER
USER
USER
USER
USER
USER
USER
USER
USER
USER
USER
USER
USER
USER
USER
USER
USER
USER
USER
USER
Gen-2
Address
0x3C6
0x3C7
0x3C8
0x3C9
0x3CA
0x3D6
0x3D7
0x3D8
0x3D9
0x3DA
0x3DF
0x3E0
0x3E1
0x3E2
0x3E3
0x3E4
0x3E5
0x3E6
0x3E7
0x3E8
0x3E9
0x3EA
0x3EB
WM710xx Secure F-RAM with Gen-2 RFID
Word
Pointer
(EBV8)
0x8746
0x8747
0x8748
0x8749
0x874A
0x8756
0x8757
0x8758
0x8759
0x875A
0x875F
0x8760
0x8761
0x8762
0x8763
0x8764
0x8765
0x8766
0x8767
0x8768
0x8769
0x876A
0x876B
Description
16k Memory: END
(BLK_SIZE = 2 words/block)
16k Memory: END
(BLK_SIZE = 4 words/block)
16k Memory: END
(BLK_SIZE = 8 words/block)
16k Memory: END
(BLK_SIZE = 16 words/block)
16k Memory: END
(BLK_SIZE = 32 words/block)
(BLK_SIZE > 32 words/block)
RESERVED
RESERVED
RESERVED
RESERVED
GEN2 WM710XX MEMORY BANKS
The RFID memory banks reside in Ramtron‟s non-volatile F-RAM memory. F-RAM brings many benefits to
the WM710xx. The first benefit is the size of the memory itself up to 16k-bit, most of which is available in
the USER memory bank. F-RAM‟s impact on the Gen2 protocol is most dramatically seen when writing to
WM710xx memory. Unlike EEPROM memory, no charge pump or memory soak time is required to write to
WM710xx memory, resulting in zero time and zero power penalties. The write cycle is completed
immediately, allowing an interrogator to continue writing additional data to memory with no time penalty
incurred due to the memory itself. A comparison between F-RAM and EEPROM memories is shown in Figure
3. The figure shows the minimum number of Gen2 instructions required to perform a SELECT,
INVENTORY, and ACCESS sequence of commands to write a data word to memory. The same interrogator
command sequence is transmitted to the WM710xx and an EEPROM-based RFID. The effect of the EEPROM
time penalty is shown within the context of the protocol.
Rev. 1.4
May 2011
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WM71004 arduino
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WM710xx Secure F-RAM with Gen-2 RFID
Upon power up, WM710xx‟s control logic reads the Control/Status word out of memory and configures itself
accordingly. User applications may change the Control Word as needed providing the register has not been
permanently locked. The Control/Status word may be read by the application at any time.
Register Locking: The LOCK and PERMALOCK control bits are implemented in a similar manner as locking
bits used for Gen2 memory bank locking with the exception that the lock control bits are incorporated into the
register they are locking. As such, attention needs to be placed on how the contents of the Control/Status word
are written when the register is not completely unlocked.
Table 4: Control/Status Word Locking
LOCK
0
0
1
1
PERMA-
LOCK
0
1
0
1
Description
Register unlocked. All control bits, including the LOCK and PERMALOCK bits can
be written to from the OPEN or SECURED states.
Register permanently unlocked. All control bits can be written from the OPEN or
SECURED states. The LOCK and PERMALOCK bits must be set to logic values 0
and 1 respectively when writing the Control/Status word.
Register locked. All control bits can be written to only from the SECURED state.
The register cannot be written to in the OPEN state. The LOCK and PERMALOCK
bits must be set to logic values 1 and 0 respectively when writing the Control/Status
word.
Register permanently locked. The register cannot be written in any circumstance.
Block Write Enable: The BLKWREN control bit enables usage of the WM710xx custom command
BLOCKWRITE. The BLKWREN parameter is internally updated during power-on WM710xx initialization.
In the event the host application toggles the state of BLKWREN, a WM710xx power cycle is required to reflect
the change.
Block Size: The 3 BLKSIZ[2:0] control bits adjust the USER memory block sizes as shown in Table 5:. This
provides the RFID application the ultimate flexibility in determining a balance between the USER memory
requirements and the granularity of the number of USER memory words per block. For the WM71016, the
larger the granularity of the block size, the greater amount of available USER memory; block size has no effect
on WM71004 or WM71008 memory. The effect of the block size on available USER memory is shown in
Table 1. The total number of USER memory words available as a function of the block size is shown in Table 5
below. It is of utmost importance that the 3-bit block size is not modified once set, which would result in
corruption of block permalock status bits.
Table 5: Available USER Memory
Memory
4k
8k
16k
16k
16k
16k
16k
16k
16k
16k
BLKSIZ
xxx
xxx
000
001
010
011
100
101
110
110
Words/Block
x
x
1
2
4
8
16
32
64
128
Free USER Memory
(words)
230
486
931
963
979
987
991
993
993
993
Wrap Status: The WRPSTAT status bit is asserted to a logic one when the following conditions are true:
(a) WRPEN=1, AUTOINCR=1 and AUTOLOCK=0,
(b) The contents of the Working Stored Address register address the last USER memory location, and
(c) An unaddressed WRITE command is received.
The WRPSTAT can be cleared by the RFID interrogator by writing a logic zero to the WRPSTAT bit.
Rev. 1.4
May 2011
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