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PDF HFA60EA120P Data sheet ( Hoja de datos )
| Número de pieza | HFA60EA120P | |
| Descripción | Ultrafast Soft Recovery Diode | |
| Fabricantes | Vishay Siliconix | |
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HFA60EA120P
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 60 A
SOT-227
PRODUCT SUMMARY
VR
VF (typical)
trr (typical)
IF(DC) at TC
1200 V
2.2 V
145 ns
30 A at 120 °C
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Antiparallel diodes
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
This SOT-227 modules with HEXFRED® rectifier are in
antiparallel configuration. The antiparallel configuration is
used for simple series rectifier and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
Continuous forward current
VR
IF
Single pulse forward current
IFSM
Maximum repetitive forward current
IFRM
Maximum power dissipation
PD
RMS isolation voltage
Operating junction and storage
temperature range
VISOL
TJ, TStg
TEST CONDITIONS
TC = 120 °C
TJ = 25 °C
Rated VR, square wave, 20 kHz, TC = 60 °C
TC = 25 °C
TC = 100 °C
Any terminal to case, t = 1 minute
MAX.
1200
30
350
130
312
125
2500
- 55 to 150
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR IR = 100 μA
1200
IF = 30 A
-
Forward voltage
VFM IF = 60 A
-
IF = 60 A, TJ = 150 °C
-
Reverse leakage current
VR = VR rated
IRM
TJ = 150 °C, VR = VR rated
-
-
TYP.
-
2.2
2.7
2.1
2.0
2.7
MAX.
-
3.0
3.8
-
75
10
UNITS
V
μA
mA
Document Number: 94610 For technical questions within your region, please contact one of the following:
Revision: 06-Aug-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
HFA60EA120P
HEXFRED®
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94610 For technical questions within your region, please contact one of the following:
Revision: 06-Aug-10
www.vishay.com
5
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5 Page | ||
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| PDF Descargar | [ Datasheet HFA60EA120P.PDF ] | |
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