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HFA80FA120 PDF даташит

Спецификация HFA80FA120 изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Soft Recovery Diode».

Детали детали

Номер произв HFA80FA120
Описание Soft Recovery Diode
Производители International Rectifier
логотип International Rectifier логотип 

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HFA80FA120 Даташит, Описание, Даташиты
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Bulletin PD-20395 rev. A 01/02
HFA80FA120
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features
• Fast Recovery Time Characteristic
• Electrically Isolated Base Plate
• Large Creepage Distance Between Terminal
• Simplified Mechanical Designs, Rapid Assembly
Description/ Applications
The dual diode series configuration (HFA80FA120) is used for output rectification
or frewheeling/ clamping operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from the copper base
plate, allowing for common heatsinks and compact assemblies to be built.
These modules are intended for general applications such as HV power
supplies, electronic welders, motor control and inverters.
VR = 1200V
VF(typ) = 2.6V
IF(AV) = 80A
trr (typ) = 25ns
Absolute Maximum Ratings
Parameters
VR
IF
IFSM
IFRM
PD
VISOL
TJ, TSTG
Cathode-to-Anode Voltage
Continuous Forward Current, TC = 60°C
Per Leg
Single Pulse Forward Current, TJ = 25°C
Per Leg
Maximum Repetitive Forward Current, Rated VR,
Square wave, 20KHz, TC = 60°C
Max Power Dissipation, TC = 100°C
Max Power Dissipation, TC = 25°C
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Operating Junction and Storage Temperatures
Max
1200
40
400
72
71
178
2500
- 55 to 150
Units
V
A
W
V
°C
Case Styles
HFA80FA120
K2 A2
www.irf.com
SOT-227
K1 A1
1
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HFA80FA120 Даташит, Описание, Даташиты
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HFA80FA120
Bulletin PD-20395 rev. A 01/02
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
VBR Cathode Anode
Breakdown Voltage
1200 - -
V I R = 100µA
VFM Forward Voltage
- 2.6 3.0 V I F = 25A
Fig. 1
- 2.9 3.3 V I F = 40A
- 3.4 -
V I F = 80A, T J = 125°C
IRM Reverse Leakage Current
- 2.0 - µA V R = VR Rated
Fig. 2
- 0.5 2 mA T J = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance
- 43 - pF V R = 200V
Fig. 3
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
trr Reverse Recovery Time
IRRM
Peak Recovery Current
Qrr Reverse Recovery Charge
- 25 -
- 52 -
- 110 -
- 5.9 -
- 10.8 -
- 160 -
- 630 -
ns I F = 1A, diF/dt = 200A/µs, VR = 30V
TJ = 25°C
TJ = 125°C
A T J = 25°C
TJ = 125°C
IF = 40A
diF /dt = - 200A/µs
VR = 200V
nC T J = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
RthJC
RthCS
Wt
T
Parameters
Junction to Case, Single Leg Conducting
Both Leg Conducting
Case to Heat Sink, Flat, Greased Surface
Weight
Mounting Torque
Min Typ Max
0.7
0.35
0.05
30
1.3
Units
°C/W
K/W
g
(N*m)
2 www.irf.com
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HFA80FA120 Даташит, Описание, Даташиты
www.DataSheet.co.kr
HFA80FA120
Bulletin PD-20395 rev. A 01/02
100 10
Tj = 150˚C
1
125˚C
0.1
0.01
0.001
25˚C
0.0001
0 200 400 600 800 1000 1200
10
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
Tj = 25˚C
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
100
1
1 1.5 2 2.5 3 3.5 4
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
1 10 100 1000 10000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
1
D = 0.50
D = 0.20
0.1 D = 0.10
D = 0.05
D = 0.02
0.01 D = 0.01
0.001
0.0001
0.00001
Single Pulse
(Thermal Resistance)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t2
.
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.1
1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
www.irf.com
.
10
3
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