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PDF HFA80FA120P Data sheet ( Hoja de datos )
| Número de pieza | HFA80FA120P | |
| Descripción | Ultrafast Soft Recovery Diode | |
| Fabricantes | Vishay Siliconix | |
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HFA80FA120P
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 80 A
SOT-227
PRODUCT SUMMARY
VR
VF (typical)
trr (typical)
IF(DC) at TC
1200 V
2.6 V
25 ns
40 A at 78 °C
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
The dual diode series configuration (HFA80FA120P) is used
for output rectification or freewheeling/clamping operation
and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current
IF
Single pulse forward current
Maximum repetitive forward current
IFSM
IFRM
Maximum power dissipation
PD
RMS isolation voltage
Operating junction and storage
temperature range
VISOL
TJ, TStg
TEST CONDITIONS
TC = 78 °C
TJ = 25 °C
Rated VR, square wave, 20 kHz, TC = 60 °C
TC = 25 °C
TC = 100 °C
Any terminal to case, t = 1 min
MAX.
1200
40
400
72
178
71
2500
- 55 to + 150
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
VBR IR = 100 μA
IF = 25 A
Forward voltage
VFM IF = 40 A
See fig. 1
IF = 80 A, TJ = 125 °C
Reverse leakage current
VR = VR rated
IRM See fig. 2
TJ = 125 °C, VR = 0.8 x VR rated
Junction capacitance
CT VR = 200 V
See fig. 3
MIN.
1200
-
-
-
-
-
-
TYP.
-
2.6
2.9
3.4
2.0
0.5
43
MAX.
-
3.0
3.3
-
-
2
-
UNITS
V
μA
mA
pF
Document Number: 94075 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
HFA80FA120P
HEXFRED®
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 80 A
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94075 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
5
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HFA80FA120P.PDF ] | |
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