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SCH1304 PDF даташит

Спецификация SCH1304 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «P-Channel Silicon MOSFET».

Детали детали

Номер произв SCH1304
Описание P-Channel Silicon MOSFET
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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SCH1304 Даташит, Описание, Даташиты
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Ordering number : ENN8100
SCH1304
SCH1304
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
--30
±20
--2
--8
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : JD
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--10V
ID=--0.5A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--30
--1.2
1.2
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
2.0 S
130 170 m
225 320 m
200 pF
47 pF
32 pF
7.2 ns
2.9 ns
21 ns
8.7 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1504PE TS IM TB-00000520 No.8100-1/4
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SCH1304 Даташит, Описание, Даташиты
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SCH1304
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=--10V, VGS=--10V, ID=--2A
VDS=--10V, VGS=--10V, ID=--2A
VDS=--10V, VGS=--10V, ID=--2A
IS=--2A, VGS=0
Ratings
min typ max
Unit
5.5 nC
0.98
nC
0.82
nC
--0.85
--1.5 V
Package Dimensions
unit : mm
2221A
1.6
0.2
654
0.2
1 23
0.5
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : SCH6
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --15V
ID= --1A
RL=15
D VOUT
SCH1304
P.G 50S
ID -- VDS
--2.0
--1.6
--3.5V
--1.2
--0.8 VGS= --3.0V
--0.4
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT03223
RDS(on) -- VGS
400
Ta=25°C
350
300
250
--1.0A
200
ID= --0.5A
150
100
50
0
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate-to-Source Voltage, VGS -- V IT08148
--5.0
VDS= --10V
--4.5
ID -- VGS
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
400
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
IT03224
350
300
250
ID= --0.5A, VGS= --4V
200
150 ID= --1.0A, VGS= --10V
100
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT08149
No.8100-2/4
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SCH1304 Даташит, Описание, Даташиты
www.DataSheet.co.kr
SCH1304
yfs-- ID
10
7 VDS= --10V
5
3
2 25°C
1.0
7
Ta= --25°C 75°C
5
3
2
0.1
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0
Drain Current, ID -- A
SW Time -- ID
2
VDD= --15V
100 VGS= --10V
7
5
23
5 7 --10
IT03227
3 td(off)
2
10 td(on)
7
5
3
2
tf
tr
--10 IF -- VSD
7 VGS=0
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
--0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2
Diode Forward Voltage, VSD -- V IT03228
Ciss, Coss, Crss -- VDS
3
f=1MHz
2 Ciss
100
7
5
Coss
3 Crss
2
1.0
--0.1
23
5 7 --1.0
Drain Current, ID -- A
VGS -- Qg
--10
VDS= --10V
--9 ID= --2A
--8
2
35
IT03229
--7
--6
--5
--4
--3
--2
--1
0
0123456
Total Gate Charge, Qg -- nC
IT03231
PD -- Ta
1.0
10
0
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT03230
ASO
2
--10 IDP= --8A
<10µs
7
5
3
2
--1.0
7
5
3
2
--0.1
7
ID=
--2A
Operation in this
area is limited by
RDSDC(oonp)e.ration10(T0am=1s205m°Cs )101m0µss
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board (900mm2!0.8mm)
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3
5
Drain-to-Source Voltage, VDS -- V IT08150
0.8
0.6
0.4
0.2
Mounted on a ceramic board (900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT08147
No.8100-3/4
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Номер в каталогеОписаниеПроизводители
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