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SCH1404 PDF даташит

Спецификация SCH1404 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «N-Channel Silicon MOSFET».

Детали детали

Номер произв SCH1404
Описание N-Channel Silicon MOSFET
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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SCH1404 Даташит, Описание, Даташиты
www.DataSheet.co.kr
Ordering number : ENN8103
SCH1404
SCH1404
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
30
±20
2.5
10
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : KD
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=1A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
30
1.2
1.8
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
3.0 S
84 110 m
125 175 m
180 pF
42 pF
25 pF
7.0 ns
2.8 ns
18.5
ns
4.4 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2404PE TS IM TB-0000167 No.8103-1/4
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SCH1404 Даташит, Описание, Даташиты
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SCH1404
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, VGS=10V, ID=2.5A
VDS=10V, VGS=10V, ID=2.5A
VDS=10V, VGS=10V, ID=2.5A
IS=2.5A, VGS=0
Ratings
min typ max
Unit
4.9 nC
0.93
nC
0.63
nC
0.85
1.2 V
Package Dimensions
unit : mm
2221A
1.6
0.2
654
0.2
1 23
0.5
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : SCH6
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=15V
ID=1.5A
RL=10
D VOUT
SCH1404
P.G 50S
ID -- VDS
4.0
3.6
3.2
2.8 3.0V
2.4
2.0
1.6
1.2 VGS=2.5V
0.8
0.4
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT02942
RDS(on) -- VGS
250
Ta=25°C
200
1.5A
150
ID=1.0A
100
50
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT08154
ID -- VGS
4.0
VDS=10V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Gate-to-Source Voltage, VGS -- V IT02943
RDS(on) -- Ta
250
200
150 ID=1.0A, VGS=4V
100 ID=1.5A, VGS=10V
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT08155
No.8103-2/4
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SCH1404 Даташит, Описание, Даташиты
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SCH1404
yfs-- ID
10
7 VDS=10V
5
3
2 25°C
1.0
7
Ta= --25°C 75°C
5
3
2
0.1
0.01
23
100
7
VDD=15V
VGS=10V
5
5 7 0.1 2 3 5 7 1.0
Drain Current, ID -- A
SW Time -- ID
3
td(off)
2
23 5
IT02946
IF -- VSD
10
7 VGS=0
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V IT02947
Ciss, Coss, Crss -- VDS
1000
f=1MHz
7
5
3
2 Ciss
10
7 td(on)
5 tf
3 tr
2
1.0
0.1
23
10
VDS=10V
9 ID=2.5A
8
5 7 1.0
23
Drain Current, ID -- A
VGS -- Qg
7
6
5
4
3
2
1
0
01234
Total Gate Charge, Qg -- nC
PD -- Ta
1.0
5 7 10
IT02948
56
IT02950
100
7
5
Coss
3
Crss
2
10
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT02949
ASO
2
IDP=10A
10
<10µs
7
5
3
2
1.0
7
5
3
2
0.1
7
ID=2.5A
1ms 100µs
Operation in this
area is limited by
RDSD(Coonp)e.rat1io0n0(mTsa1=02m5s°C)
5
3 Ta=25°C
2 Single pulse
Mounted on a ceramic board (900mm2!0.8mm)
0.01
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
5
Drain-to-Source Voltage, VDS -- V IT08156
0.8
0.6
0.4
0.2
Mounted on a ceramic board (900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT08147
No.8103-3/4
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