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SBE817 PDF даташит

Спецификация SBE817 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «Rectifier».

Детали детали

Номер произв SBE817
Описание Rectifier
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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SBE817 Даташит, Описание, Даташиты
www.DataSheet.co.kr
Ordering number : ENA0328
SBE817
SANYO Semiconductors
DATA SHEET
SBE817
Low IR Schottky Barrier Diode
15V, 2.0A Rectifier
Applications
High frequency rectification (switching regulators, converters, choppers).
Features
Composite type with 2 low IR SBDs in one package, facilitating high density mounting.
Small switching noise.
Low forward voltage (IF=2.0A, VF max=0.57V).
Low reverse current (VR=7.5V, IR max=6μA).
Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : SA
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, 1 cycle
Ratings
15
17
2.0
20
--55 to +125
--55 to +125
Unit
V
V
A
A
°C
°C
*: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8),
and between Terminal 3 and Terminal 5 (or 6).
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
www.semiconductor-sanyo.com/network
D1008SB MS IM TC-00001735 No. A0328-1/4
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SBE817 Даташит, Описание, Даташиты
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SBE817
Electrical Characteristics at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF1
VF2
IR
C
trr
Rth(j-a)
Conditions
IR=0.3mA
IF=1.0A
IF=2.0A
VR=7.5V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When mounted on ceramic substrate (900mm20.8mm)
min
15
Ratings
typ
0.45
0.52
35
65
max
0.5
0.57
6
10
Unit
V
V
V
μA
pF
ns
°C / W
Package Dimensions
unit : mm (typ)
7045-004
0.2
8
5
0.125
1
0.5
2.0
4
1 : Anode1
2 : NC
3 : Anode2
4 : Anode2(NC)
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
SANYO : EMH8
Electrical Connection
8765
1234
1 : Anode1
2 : NC
3 : Anode2
4 : Anode2(NC)
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
Top view
*: Terminal 4 is used for the purposes such as
test. Although it is connected to Anode 2,
please handle it as NC Terminal
trr Test Circuit
Duty10%
50Ω
10μs
100Ω
--5V
10Ω
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
IF -- VF
0.1 0.2 0.3 0.4 0.5
Forward Voltage, VF -- V
trr
0.6 0.7
IT14237
10000
1000
100
10
1.0
IR -- VR
Ta=125°C
100°C
75°C
50°C
25°C
0.1 0°C
0.01
0.001
--25°C
0.0001
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Reverse Voltage, VR -- V
IT14238
No. A0328-2/4
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SBE817 Даташит, Описание, Даташиты
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SBE817
1.6
Rectangular
wave
1.4
θ
1.2 360°
1.0 Sine wave
PF(AV) -- IO
(4) (3)
(1) (2)
(5)
0.8 180°
360°
0.6
(1)Rectangular wave θ=60°
0.4 (2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
0.2 (4)Sine wave θ=180°
0 (5)DC
0 0.5 1.0 1.5 2.0 2.5
Average Output Current, IO -- A IT14239
Ta -- IO
150
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
125 (3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(5)DC
100
75
Rectangular
50 wave
θ
25
Sine
wave
360°
180°
(3)
(1) (2) (4) (5)
0 360°
0 0.5 1.0 1.5 2.0 2.5
Average Output Current, IO -- A IT14241
24 IFSM -- t
Current waveform 50Hz sine wave
20 IS
20ms
16 t
PR(AV) -- VR
1.4E-05
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
1.2E-05 (3)Rectangular wave θ=180°
(4)Sine wave θ=180°
1.E-05
Rectangular
wave
360°
θ
8.E-06
VR
Sine wave
6.E-06
180°
360°
4.E-06 VR
(1)
(2)
(3)
(4)
2.E-06
0.E+00
0
5
3
2
2 4 6 8 10 12 14 16
Average Reverse Voltage, VR -- V
C -- VR
IT14240
f=1MHz
100
7
5
3
2
10
0.1
23
5 7 1.0
2 3 5 7 10
23
Reverse Voltage, VR -- V
IT13213
12
8
4
0
0.01
2 3 5 7 0.1
2 3 5 7 1.0
23
Time, t -- s
IT13214
No. A0328-3/4
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