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HMT325S6BFR8C Datasheet Download - Hynix Semiconductor

Номер произв HMT325S6BFR8C
Описание 204pin DDR3 SDRAM SODIMM
Производители Hynix Semiconductor
логотип Hynix Semiconductor логотип 



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HMT325S6BFR8C Даташит, Описание, Даташиты
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204pin DDR3 SDRAM SODIMM
DDR3 SDRAM
Unbuffered SODIMMs
Based on 2Gb B-die
HMT312S6BFR6C
HMT325S6BFR6C
HMT325S6BFR8C
HMT351S6BFR8C
*Hynix Semiconductor reserves the right to change products or specifications without notice.
Rev. 0.2 / Feb. 2010
1
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Revision History
Revision No.
0.1
0.2
History
Initial Release
Added IDD Speciricaion
Draft Date
Dec.2009
Feb.2010
Remark
Preliminary
Preliminary
Rev. 0.2 / Feb. 2010
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HMT325S6BFR8C Даташит, Описание, Даташиты
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Description
Hynix Unbuffered DDR3 SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line
Memory Modules) are low power, high-speed operation memory modules that use Hynix DDR3 SDRAM
devices. These Unbuffered DDR3 SDRAM DIMMs are intended for use as main memory when installed in
systems such as mobile personal computers.
Features
• VDD=1.5V +/- 0.075V
• VDDQ=1.5V +/- 0.075V
• VDDSPD=3.0V to 3.6V
• Functionality and operations comply with the
DDR3 SDRAM datasheet
• 8 internal banks
• Data transfer rates: PC3-10600, PC3-8500, or
PC3-6400
• Bi-directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly: BL 8 or BC
(Burst Chop) 4
• On Die Termination (ODT) supported
• RoHS compliant
* This product is in compliance with the RoHS directive.
Ordering Information
Part Number
Density Organization
HMT312S6BFR6C-G7/H9/PB
HMT325S6BFR6C-G7/H9/PB
HMT325S6BFR8C-G7/H9/PB
HMT351S6BFR8C-G7/H9/PB
1GB
2GB
2GB
4GB
128Mx64
256Mx64
256Mx64
512Mx64
Component Composition
128Mx16(H5TQ2G63BFR)*4
128Mx16(H5TQ2G63BFR)*8
256Mx8(H5TQ2G83BFR)*8
256Mx8(H5TQ2G83BFR)*16
Rev. 0.2 / Feb. 2010
# of
ranks
1
2
2
3
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