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75N08 PDF даташит

Спецификация 75N08 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую « FDP75N08».

Детали детали

Номер произв 75N08
Описание FDP75N08
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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75N08 Даташит, Описание, Даташиты
www.DataSheet.co.kr
FDP75N08
75V N-Channel MOSFET
Features
• 75A, 75V, RDS(on) = 0.011@VGS = 10 V
• Low gate charge ( typical 150 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
June 2006
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
GDS
TO-220
FDP Series
G
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
S
FDP75N08
75
75
47.7
300
± 20
1164
75
13.1
4.5
131
1
-55 to +150
300
FDP75N08
0.95
0.5
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FDP75N08 Rev. A
1
www.fairchildsemi.com
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75N08 Даташит, Описание, Даташиты
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Package Marking and Ordering Information
Device Marking
FDP75N08
Device
FDP75N08
Package
TO-220
Reel Size
--
Tape Width
--
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 75 V, VGS = 0 V
VDS = 60 V, TC = 125°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
75
--
--
--
--
--
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 37.5 A
VDS = 40 V, ID =37.5 A
(Note 4)
2.0
--
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 37.5 V, ID = 75A,
RG = 25
--
--
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 60 V, ID = 75A,
VGS = 10 V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
--
ISM Maximum Pulsed Drain-Source Diode Forward Current
--
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 75 A
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 75 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 138µH, IAS = 75A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 75A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
0.6
--
--
--
--
--
9.5
15
2940
680
85
7.2
68
77
93
64
16
24
--
--
--
62
150
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
11 m
-- S
3820
890
125
pF
pF
pF
25 ns
146 ns
164 ns
196 ns
84 nC
-- nC
-- nC
75 A
300 A
1.4 V
-- ns
-- nC
FDP75N08 Rev. A
2 www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/









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75N08 Даташит, Описание, Даташиты
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
Top: 15.0V
9.0V
7.5V
7.0V
6.5v
6.0V
102
5.5V
5.0V
Bottom : 4.5V
101
100
* Note :
1. 250µs Pulse Test
2. T =250C
C
101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
100
1500C
250C
10
-550C
* Note :
1. V =40V
DS
2. 250µs Pulse Test
1
2468
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
0.012
0.011
0.010
V = 10V
GS
0.009
0.008
0.007
0
V = 20V
GS
* Note : T = 25oC
J
25 50 75 100 125 150 175 200
I , Drain Current [A]
D
102
101
100
0.2
1500C
250C
* Note :
1. V =0V
GS
2. 250µs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4
V , Source-Drain Violtage [V]
DS
1.6
Figure 5. Capacitance Characteristics
6000
5000
4000
3000
2000
1000
0
10-1
C
oss
C
iss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
* Note :
1. V = 0 V
C
rss
GS
2. f = 1 MHz
100 101
V , Drain-Source Voltage [V]
DS
Figure 6. Gate Charge Characteristics
12
10
V = 37.5V
DS
V = 60V
DS
8
6
4
2
* Note : I = 75A
D
0
0 10 20 30 40 50 60 70 80
Q , Total Gate Charge [nC]
G
FDP75N08 Rev. A
3 www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/










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