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NP88N055ELE PDF даташит

Спецификация NP88N055ELE изготовлена ​​​​«NEC» и имеет функцию, называемую «MOS FIELD EFFECT TRANSISTOR».

Детали детали

Номер произв NP88N055ELE
Описание MOS FIELD EFFECT TRANSISTOR
Производители NEC
логотип NEC логотип 

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NP88N055ELE Даташит, Описание, Даташиты
www.DataSheet.co.kr
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N055ELE, NP88N055KLE
NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP88N055ELE-E1-AY Note1, 2
NP88N055ELE-E2-AY Note1, 2
NP88N055KLE-E1-AY Note1
NP88N055KLE-E2-AY Note1
NP88N055CLE-S12-AZ Note1, 2
NP88N055DLE-S12-AY Note1, 2
NP88N055MLE-S18-AY Note1
NP88N055NLE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A)
RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID = 44 A)
RDS(on)3 = 6.8 mΩ MAX. (VGS = 4.5 V, ID = 44 A)
Low input capacitance
Ciss = 9700 pF TYP.
Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13933EJ7V0DS00 (7th edition)
Date Published October 2007 NS
1999, 2000, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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NP88N055ELE Даташит, Описание, Даташиты
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NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55 V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) Note1
Drain Current (pulse) Note2
VGSS
ID(DC)
ID(pulse)
±20
±88
±352
V
A
A
Total Power Dissipation (TA = 25°C) PT 1.8 W
Total Power Dissipation (TC = 25°C) PT 288 W
Channel Temperature
Tch 175 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg 55 to +175 °C
IAS
75/88
A
EAS 562/232 mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW 10 μs, Duty cycle 1%
3. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52
83.3
°C/W
°C/W
2 Data Sheet D13933EJ7V0DS
Datasheet pdf - http://www.DataSheet4U.net/









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NP88N055ELE Даташит, Описание, Даташиты
www.DataSheet.co.kr
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 55 V, VGS = 0 V
Gate Leakage Current
Gate to Source Threshold Voltage
IGSS
VGS(th)
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 44 A
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 44 A
RDS(on)2
VGS = 5.0 V, ID = 44 A
RDS(on)3
VGS = 4.5 V, ID = 44 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
td(on)
tr
td(off)
VDD = 28 V, ID = 44 A,
VGS = 10 V,
RG = 1 Ω
Fall Time
tf
Total Gate Charge
QG1 VDD = 44 V, VGS = 10 V, ID = 88 A
Gate to Source Charge
Gate to Drain Charge
QG2
QGS
QGD
VDD = 44 V,
VGS = 5.0 V,
ID = 88 A
Body Diode Forward Voltage
VF(S-D)
IF = 88 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 88 A, VGS = 0 V,
Qrr di/dt = 100 A/μs
MIN.
1.5
38
TYP.
2.0
75
4.1
4.8
5.1
9700
1100
490
37
22
180
35
160
88
27
48
1.0
62
120
MAX.
10
±10
2.5
5.2
6.3
6.8
14600
1700
890
82
56
360
88
240
140
UNIT
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
Data Sheet D13933EJ7V0DS
3
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NP88N055ELEMOS FIELD EFFECT TRANSISTORNEC
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