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NP88N075CUE PDF даташит

Спецификация NP88N075CUE изготовлена ​​​​«NEC» и имеет функцию, называемую «MOS FIELD EFFECT TRANSISTOR».

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Номер произв NP88N075CUE
Описание MOS FIELD EFFECT TRANSISTOR
Производители NEC
логотип NEC логотип 

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NP88N075CUE Даташит, Описание, Даташиты
www.DataSheet.co.kr
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N075EUE, NP88N075KUE
NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP88N075EUE-E1-AY Note1, 2
NP88N075EUE-E2-AY Note1, 2
NP88N075KUE-E1-AY Note1
NP88N075KUE-E2-AY Note1
NP88N075CUE-S12-AZ Note1, 2
NP88N075DUE-S12-AY Note1, 2
NP88N075MUE-S18-AY Note1
NP88N075NUE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A)
Low input capacitance
Ciss = 8200 pF TYP.
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14676EJ6V0DS00 (6th edition)
Date Published October 2007 NS
1999, 2000, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Datasheet pdf - http://www.DataSheet4U.net/









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NP88N075CUE Даташит, Описание, Даташиты
www.DataSheet.co.kr
NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) Note1
Drain Current (Pulse) Note2
VGSS
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
IAS
EAS
75
±20
±88
±352
288
1.8
175
55 to +175
69/88
450/14
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW 10 μs, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52
83.3
°C/W
°C/W
2 Data Sheet D14676EJ6V0DS
Datasheet pdf - http://www.DataSheet4U.net/









No Preview Available !

NP88N075CUE Даташит, Описание, Даташиты
www.DataSheet.co.kr
NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 75 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 44 A
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 44 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
td(on)
tr
td(off)
VDD = 38 V, ID = 44 A,
VGS = 10 V,
RG = 0 Ω
Fall Time
tf
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG VDD = 60 V,
QGS
QGD
VGS = 10 V,
ID = 88 A
Body Diode Forward Voltage
VF(S-D)
IF = 88 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 88 A, VGS = 0 V,
Qrr di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
10 μA
±100 nA
2.0 3.0 4.0
V
30 60
S
6.2 8.5 mΩ
8200 12300 pF
800 1200 pF
440 800 pF
35 77 ns
28 70 ns
105 210 ns
16 40 ns
150 230 nC
30 nC
52 nC
1.0 V
80 ns
240 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
Data Sheet D14676EJ6V0DS
3
Datasheet pdf - http://www.DataSheet4U.net/










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