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PDF W9412G2CB Data sheet ( Hoja de datos )
| Número de pieza | W9412G2CB | |
| Descripción | 1M X 4 BANKS X 32 BITS GDDR SDRAM | |
| Fabricantes | Winbond | |
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W9412G2CB
1M × 4 BANKS × 32 BITS GDDR SDRAM
Table of Contents-
1. GENERAL DESCRIPTION .................................................................................................................................4
2. FEATURES ........................................................................................................................................................4
3. KEY PARAMETERS...........................................................................................................................................5
4. BALL CONFIGURATION....................................................................................................................................6
5. BALL DESCRIPTION .........................................................................................................................................7
6. BLOCK DIAGRAM..............................................................................................................................................9
7. FUNCTIONAL DESCRIPTION .........................................................................................................................10
7.1 Power Up Sequence............................................................................................................ 10
7.2 Command Function ............................................................................................................. 10
7.2.1 Bank Activate Command ......................................................................................................10
7.2.2 Bank Precharge Command ..................................................................................................10
7.2.3 Precharge All Command ......................................................................................................10
7.2.4 Write Command ...................................................................................................................10
7.2.5 Write with Auto-precharge Command ..................................................................................11
7.2.6 Read Command ...................................................................................................................11
7.2.7 Read with Auto-precharge Command ..................................................................................11
7.2.8
7.2.9
7.2.10
7.2.11
7.2.12
7.2.13
7.2.14
Mode Register Set Command ..............................................................................................11
Extended Mode Register Set Command ..............................................................................11
No-Operation Command ......................................................................................................11
Burst Read Stop Command..................................................................................................12
Device Deselect Command ..................................................................................................12
Auto Refresh Command .......................................................................................................12
Self Refresh Entry Command...............................................................................................12
7.2.15 Self Refresh Exit Command .................................................................................................12
7.2.16 Data Write Enable /Disable Command .................................................................................13
7.3 Read Operation ................................................................................................................... 13
7.4 Write Operation ................................................................................................................... 13
7.5 Precharge ............................................................................................................................ 13
7.6 Burst Termination ................................................................................................................ 13
7.7 Refresh Operation ............................................................................................................... 14
7.8 Power Down Mode .............................................................................................................. 14
7.9 Input Clock Frequency Change during Precharge Power Down Mode .............................. 14
7.10 Mode Register Operation .................................................................................................... 14
7.10.1 Burst Length field (A2 to A0) ................................................................................................15
7.10.2 Addressing Mode Select (A3)...............................................................................................15
Publication Release Date:Nov. 19, 2007
- 1 - Revision A09
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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W9412G2CB
3. KEY PARAMETERS
SYMBOL
DESCRIPTION
CL = 2
tCK Clock Cycle Time
CL = 2.5
tRAS
tRC
IDD0
IDD1
IDD4R
IDD4W
IDD5
IDD6
CL = 3
Active to Precharge Command Period
Active to Ref/Active Command Period
Operating Current:
One Bank Active-Precharge
Operating Current:
One Bank Active-Read-Precharge
Burst Operation Read Current
Burst Operation Write Current
Auto Refresh Current
Self Refresh Current
MIN./MAX.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Min.
Max.
-5/-5H
7.5 nS
12 nS
6 nS
12 nS
5 nS
10 nS
40 nS
50 nS
150 mA
Max.
Max.
Max.
Max.
Max.
170 mA
220 mA
250 mA
200 mA
3 mA
-6
7.5 nS
12 nS
6 nS
12 nS
6 nS
12 nS
42 nS
54 nS
140 mA
160 mA
200 mA
230 mA
190 mA
3 mA
-75
7.5 nS
12 nS
7.5 nS
12 nS
7.5 nS
12 nS
45 nS
60 nS
130 mA
150 mA
180 mA
210 mA
180 mA
3 mA
-5-
Publication Release Date:Nov. 19, 2007
Revision A09
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
W9412G2CB
7.2.5 Write with Auto-precharge Command
( RAS = “H”, CAS = “L”, WE = “L”, BA0, BA1 = Bank, A8 = “H”, A0 to A7 = Column Address)
The Write with Auto-precharge command performs the Precharge operation automatically after the
Write operation. This command must not be interrupted by any other commands.
7.2.6 Read Command
( RAS = “H”, CAS = “L”, WE = “H”, BA0, BA1 = Bank, A8 = “L”, A0 to A7 = Column Address)
The Read command performs a Read operation to the bank designated by BA. The read data are
synchronized with both edges of DQS. The length of read data (Burst Length), Addressing Mode
and CAS Latency (access time from CAS command in a clock cycle) must be programmed in the
Mode Register at power-up prior to the Read operation.
7.2.7 Read with Auto-precharge Command
( RAS = “H”, CAS = ”L”, WE = ”H”, BA0, BA1 = Bank, A8 = ”H”, A0 to A7 = Column Address)
The Read with Auto-precharge command automatically performs the Precharge operation after the
Read operation.
1) READA ≥ tRAS (min) – (BL/2) x tCK
Internal precharge operation begins after BL/2 cycle from Read with Auto-precharge command.
2) tRCD(min) ≤ READA < tRAS(min) – (BL/2) x tCK
Data can be read with shortest latency, but the internal Precharge operation does not begin until
after tRAS (min) has completed.
This command must not be interrupted by any other command.
7.2.8 Mode Register Set Command
( RAS = “L”, CAS = “L”, WE = “L”, BA0 = “L”, BA1 = “L”, A0 to A11 = Register Data)
The Mode Register Set command programs the values of CAS Latency, Addressing Mode, Burst
Length and DLL reset in the Mode Register. The default values in the Mode Register after power-
up are undefined, therefore this command must be issued during the power-up sequence. Also,
this command can be issued while all banks are in the idle state. Refer to the table for specific
codes.
7.2.9 Extended Mode Register Set Command
( RAS = “L”, CAS = “L”, WE = “L”, BA0 = “H”, BA1 = “L”, A0 to A11 = Register data)
The Extended Mode Register Set command can be implemented as needed for function
extensions to the standard (SDR-SDRAM). Currently the only available mode in EMRS is DLL
enable/disable, decoded by A0. The default value of the extended mode register is not defined;
therefore this command must be issued during the power-up sequence for enabling DLL. Refer to
the table for specific codes.
7.2.10 No-Operation Command
( RAS = “H”, CAS = “H”, WE = “H”)
The No-Operation command simply performs no operation (same command as Device Deselect).
- 11 -
Publication Release Date:Nov. 19, 2007
Revision A09
Datasheet pdf - http://www.DataSheet4U.net/
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