(PDF) CEH2310 Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CEH2310
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	CET
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No Preview Available ! www.DataSheet.co.kr CEH2310 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 G(3) D(1,2,5,6,) S(4) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±12 ID 6.2 IDM 25 Maximum Power Dissipation PD 2.0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units V V A A W C Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.April http://www.cetsemi.com Datasheet pdf - http://www.DataSheet4U.net/ 1 page

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PDF CEH2310 Data sheet ( Hoja de datos )