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CEM2187 PDF даташит

Спецификация CEM2187 изготовлена ​​​​«CET» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEM2187
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEM2187 Даташит, Описание, Даташиты
www.DataSheet.co.kr
CEM2187
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -7.6A, RDS(ON) = 22m@VGS = -4.5V.
RDS(ON) = 32m@VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 D1 D2 D2
876 5
SO-8
1
123 4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -20
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID -7.6
IDM -30
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2010.Oct
http://www.cetsemi.com
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CEM2187 Даташит, Описание, Даташиты
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CEM2187
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -4.5V, ID = -7.6A
VGS = -2.5V, ID = -6A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
gFS
Ciss
Coss
Crss
VDS = -9V, ID = -7.6A
VDS = -10V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -6V, ID = -1A,
VGS = -4.5V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -6V, ID = -7.6A,
VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -2.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-20
-0.4
Typ
17
24
32
2805
505
395
20
18
89
49
31.5
3.8
8.8
Max Units
-1
100
-100
V
µA
nA
nA
-1.3 V
22 m
32 m
S
pF
pF
pF
40 ns
36 ns
178 ns
98 ns
41 nC
nC
nC
-7.6 A
-1.2 V
2
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CEM2187 Даташит, Описание, Даташиты
www.DataSheet.co.kr
5
4 -VGS=1.5,4,4.5V
3
2
1 -VGS=1V
0
0.0 0.25
0.5 0.75 1.00 1.25
1.5
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
3600
3000
Ciss
2400
1800
1200
600
0
0
2
4
Coss
Crss
68
10 12
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEM2187
15
25 C
12
9
6
3 TJ=125 C
-55 C
0
0.0
0.5
1 1.5
2 2.5
3
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=-7.6A
1.9 VGS=-4.5V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
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