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85HFL10S10 PDF даташит

Спецификация 85HFL10S10 изготовлена ​​​​«Vishay Siliconix» и имеет функцию, называемую «(85HFL Series) Fast Recovery Diodes».

Детали детали

Номер произв 85HFL10S10
Описание (85HFL Series) Fast Recovery Diodes
Производители Vishay Siliconix
логотип Vishay Siliconix логотип 

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85HFL10S10 Даташит, Описание, Даташиты
40HFL, 70HFL, 85HFL Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 40 A/70 A/85 A
DO-203AB (DO-5)
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Stud cathode and stud anode versions
• Types up to 100 VRRM
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
IF(AV)
40 A/70 A/85 A
TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
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SYMBOL
CHARACTERISTICS
40HFL
70HFL
85HFL
IF(AV)
IFSM
Maximum TC
50 Hz
60 Hz
40 70 85
85 85 85
400 700 1100
420 730 1151
50 Hz
I2t
60 Hz
800
2450
6050
730
2240
5523
I2t
11 300
34 650
85 560
VRRM
trr
TJ
Range
Range
100 to 1000
See Recovery Characteristics table
- 40 to 125
UNITS
A
°C
A
A2s
I2s
V
ns
°C
Document Number: 93150
Revision: 25-May-09
For technical questions, contact: [email protected]
www.vishay.com
1
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85HFL10S10 Даташит, Описание, Даташиты
40HFL, 70HFL, 85HFL Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 40 A/70 A/85 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER (1)
VRRM, MAXIMUM
PEAK REPETITIVE
REVERSE VOLTAGE
TJ = - 40 °C TO 125 °C
V
VRSM, MAXIMUM PEAK
NON-REPETITIVE
REVERSE VOLTAGE
TJ = 25 °C TO 125 °C
V
IFM, MAXIMUM PEAK REVERSE
CURRENT AT RATED VRRM
mA
TJ = 25 °C
TJ = 125 °C
40HFL10S02, 40HFL10S05, 40HFL10S10
100
150
40HFL20S02, 40HFL20S05, 40HFL20S10
200
300
40HFL40S02, 40HFL40S05, 40HFL40S10
40HFL60S02, 40HFL60S05, 40HFL60S10
400
600
500
0.1 10
700
40HFL80S05, 40HFL80S10
800 900
40HFL100S05, 40HFL100S10
1000
1100
70HFL10S02, 70HFL10S05, 70HFL10S10
100
150
70HFL20S02, 70HFL20S05, 70HFL20S10
200
300
70HFL40S02, 70HFL40S05, 70HFL40S10
70HFL60S02, 70HFL60S05, 70HFL60S10
400
600
500
0.1 15
700
70HFL80S05, 70HFL80S10
800 900
70HFL100S05, 70HFL100S10
1000
1100
85HFL10S02, 85HFL10S05, 85HFL10S10
100
150
85HFL20S02, 85HFL20S05, 85HFL20S10
85HFL40S02, 85HFL40S05, 85HFL40S10
85HFL60S02, 85HFL60S05, 85HFL60S10
200
400
600
www.DataSheet.co.kr
300
500
700
0.1 20
85HFL80S05, 85HFL80S10
800 900
85HFL100S05, 85HFL100S10
1000
1100
Note
(1) Types listed are cathode case, for anode case add “R” to code, i.e. 40HFLR20S02, 85HFLR100S05 etc.
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 93150
Revision: 25-May-09
Datasheet pdf - http://www.DataSheet4U.net/









No Preview Available !

85HFL10S10 Даташит, Описание, Даташиты
40HFL, 70HFL, 85HFL Series
Fast Recovery Diodes
Vishay High Power Products
(Stud Version), 40 A/70 A/85 A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at maximum case temperature
Maximum RMS forward current
Maximum peak repetitive forward current
SYMBOL
IF(AV)
IF(RMS)
IFRM
Maximum peak, one-cycle
non-repetitive forward current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing (1)
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
Note
(1) I2t for time tx = I2t • tx
I2t
VF(TO)
rF
VFM
TEST CONDITIONS
180° conduction, half sine wave
40HFL
40
Sinusoidal half wave, 30° conduction
t = 10 ms
t = 8.3 ms
Sinusoidal half wave, 100
% VRRM reapplied,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
Sinusoidal half wave,
no voltage reapplied,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM reapplied,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
No voltage reapplied,
initial TJ = TJ maximum
t = 0.1 ms to 10 ms, no voltage reapplied
63
220
400
420
475
500
800
730
1130
1030
11 300
TJ = 125 °C
1.081
6.33
TJ = 25 °C, IFM = π x IF(AV)
1.95
www.DataSheet.co.kr
70HFL
70
75
110
380
700
730
830
870
2450
2240
3460
3160
34 650
1.085
3.40
1.85
85HFL
85
134
470
1100
1151
1308
1369
6050
5523
8556
7810
85 560
1.128
2.11
1.75
UNITS
A
°C
A
A
A
A2s
A2s
V
mΩ
V
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = 25 °C, IF = 1 A to VR = 30 V,
Typical reverse
recovery time
trr
- dIF/dt = 100 A/µs
TJ = 25 °C, - dIF/dt = 25 A/µs,
IFM = π x rated IF(AV)
TJ = 25 °C, IF = 1 A to VR = 30 V,
Typical reverse
recovered charge
Qrr
- dIF/dt = 100 A/µs
TJ = 25 °C, - dIF/dt = 25 A/µs,
IFM = π x rated IF(AV)
40HFL...
S02 S05 S10
70 180 350
200 500 1000
160 750 3100
240 1300 6000
70HFL...
S02 S05 S10
60 150 290
200 500 1000
90 500 1600
240 1300 6000
85HFL...
S02 S05 S10
50 120 270
200 500 1000
70 340 1350
240 1300 6000
UNITS
ns
nC
Document Number: 93150
Revision: 25-May-09
For technical questions, contact: [email protected]
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/










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