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PDF HMC950 Data sheet ( Hoja de datos )
| Número de pieza | HMC950 | |
| Descripción | GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER | |
| Fabricantes | Hittite | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC950 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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v03.0611
Typical Applications
The HMC950 is ideal for:
• Point-to-Point Radios
3 • Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Functional Diagram
HMC950
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
Features
Saturated Output Power: +37 dBm @ 23% PAE
High Output IP3: +44.5 dBm
High Gain: 28 dB
DC Supply: +7V @ 2400 mA
No External Matching Required
Die Size: 3.23 x 3.45 x 0.1 mm
General Description
The HMC950 is a four stage GaAs pHEMT MMIC
4 Watt Power Amplifier which operates between 12
and 16 GHz. The HMC950 provides 28 dB of gain,
+37 dBm of saturated output power, and 23% PAE
from a +7V power supply. The HMC950 exhibits
excellent linearity and is optimized for high capacity
point to point and point to multi-point radio systems.
It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT
transmitters as well as SATCOM applications. The
amplifierwww.DataSheet.co.kr configuration and high gain make it an
excellent candidate for last stage signal amplification
before the antenna. All data is taken with the chip in a
50 Ohm test fixture connected via (2) 0.025 mm (1 mil)
diameter wire bonds of 0.31 mm (12 mil) length.
3-1
VEdledc=trVicdda1l ,SVpdedc2,ifVicdda3ti,oVndsd,4T, AV=dd+52,5V°dCd6, Vdd7, Vdd8 = +7V, Idd = 2400 mA [1]
Frequency Range
Parameter
Min.
Typ.
12 - 13
Max.
Min.
Typ.
13 - 16
Max.
Gain
26 28
26 28
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 2400 mA typical.
[2] Measurement taken at +7V @ 2400 mA, Pout / Tone = +24 dBm
34.5
0.056
17
17
36.5
37
43
2400
34.5
0.056
16
17
36.5
37
44.5
2400
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
v03.0611
Gain & Power vs.
Supply Current @ 14 GHz
40
3 35
30
25
20
1600
1800
Gain
P1dB
Psat
2000
Idd (mA)
2200
2400
HMC950
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
Gain & Power vs.
Supply Voltage @ 14 GHz
40
35
30
25
20
5
Gain
P1dB
Psat
5.5 6
Vdd (V)
6.5
7
Power Dissipation
20
18
16
14
12 GHz
13 GHz
12
14 GHz
15 GHz
16 GHz
10
-12 -9 -6 -3 0 3 6 9 12 15
INPUT POWER (dBm)
www.DataSheet.co.kr
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 306 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+8V
+27 dBm
150 °C
19.9 W
3.27 °C/W
-65 to +150 °C
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+5.0
2400
+6.0
2400
+7.0 2400
Note: Amplifier will operate over full voltage ranges shown
above, Vgg adjusted to achieve Idd = 2400 mA at +7V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3-5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC950.PDF ] | |
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