WFP840B PDF даташит
Спецификация WFP840B изготовлена «Winsemi» и имеет функцию, называемую «Silicon N-Channel MOSFET». |
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Детали детали
Номер произв | WFP840B |
Описание | Silicon N-Channel MOSFET |
Производители | Winsemi |
логотип |
7 Pages
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Datasheet pdf - http://www.DataSheet4U.net/
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Features
� 9A,500V, RDS(on)(Max0.75Ω)@VGS=10V
� Ultra-low Gate charge(Typical 28nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
WFP840B
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power
factor correction and half bridge and full bridge resonant topology
line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
9
5.4
36
±30
360
13.5
4.5
135
1.07
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
- - 0.93
- 0.5 -
- - 62.5
Units
℃/W
℃/W
℃/W
Rev.A Feb.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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WFP840B
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol Test Condition Min Type Max Unit
Gate leakage current
IGSS VGS=±30V,VDS=0V
-
-
±100
nA
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
±30 - - V
Drain cut -off current
VDS=500V,VGS=0V
- - 1 µA
IDSS
VDS=400V,TC=125℃
10 µA
Drain -source breakdown voltage
Breakdown voltage Temperature
Coefficient
V(BR)DSS
△BVDSS/
△TJ
ID=250 µA,VGS=0V
ID=250µA,Referenced
to 25℃
500 -
- 0.57
-
-
V
V/℃
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
3 -5 V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=4.5A
- - 0.75 Ω
Forward Transconductance
gfs VDS=40V,ID=4.5A
- 6.5 -
S
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS=25V,
VGS=0V,
f=1MHz
- 790 1030
-
24 30
pF
- 130 170
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
tr VDD=250V,
-
ton ID=9A
-
tf RG=25Ω
-
toff
(Note4,5)
-
65 140
18 15
64 125
93 195
ns
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Qg
Qgs
Qgd
VDD=400V,
VGS=10V,
ID=9A
(Note4,5)
-
-
-
28 35
nC
4-
15 -
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
IDR=9A,VGS=0V
Reverse recovery time
Reverse recovery charge
trr IDR=9A,VGS=0V,
Qrr dIDR / dt =100 A / µs
Min Type Max Unit
- - 9A
- - 36 A
- - 1.4 V
- 335 - ns
- 2.95 - µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=8mH IAS=9A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, keep you advance
2/7
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Datasheet pdf - http://www.DataSheet4U.net/
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WFP840B
Fig.1 On State Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance Variation vs
Drain Current And Gate Voltage
Fig.4 Body Diode Forward Voltage
Variation with Source Current
and Temperature
Fig.5 Capacitance Characteristis
Fig.6 Gate Charge Characteristics
Steady, keep you advance
3/7
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Номер в каталоге | Описание | Производители |
WFP840 | N-Channel MOSFET | Wisdom technologies |
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