DataSheet26.com

WFF840B PDF даташит

Спецификация WFF840B изготовлена ​​​​«Winsemi» и имеет функцию, называемую «Silicon N-Channel MOSFET».

Детали детали

Номер произв WFF840B
Описание Silicon N-Channel MOSFET
Производители Winsemi
логотип Winsemi логотип 

7 Pages
scroll

No Preview Available !

WFF840B Даташит, Описание, Даташиты
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Features
9A,500V, RDS(on)(Max0.75Ω)@VGS=10V
Ultra-low Gate charge(Typical 28nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
WFF840B
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power
factor correction and half bridge and full bridge resonant topology
line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
9*
5.4*
36*
±30
360
13.5
4.5
135
1.07
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Value
Min Typ Max
- - 0.93
- 0.5 -
- - 62.5
Units
/W
/W
/W
Rev.A Jul.2011
Copyright@WinSemi Co., Ltd., All right reserved.









No Preview Available !

WFF840B Даташит, Описание, Даташиты
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WFF840B
Electrical Characteristics(Tc=25)
Characteristics
Symbol Test Condition Min Type Max Unit
Gate leakage current
IGSS VGS=±30V,VDS=0V
-
-
±100
nA
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
±30 - - V
Drain cut -off current
VDS=500V,VGS=0V
- - 1 µA
IDSS
VDS=400V,TC=125
10 µA
Drain -source breakdown voltage
Breakdown voltage Temperature
Coefficient
V(BR)DSS
BVDSS/
TJ
ID=250 µA,VGS=0V
ID=250µA,Referenced
to 25
500 -
- 0.57
-
-
V
V/
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
3 -5 V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=4.5A
- - 0.75 Ω
Forward Transconductance
gfs VDS=40V,ID=4.5A
- 6.5 -
S
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS=25V,
VGS=0V,
f=1MHz
- 790 1030
-
24 30
pF
- 130 170
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
tr VDD=250V,
-
ton ID=9A
-
tf RG=25Ω
-
toff
(Note4,5)
-
65 140
18 15
64 125
93 195
ns
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Qg
Qgs
Qgd
VDD=400V,
VGS=10V,
ID=9A
(Note4,5)
-
-
-
28 35
nC
4-
15 -
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
IDR=9A,VGS=0V
Reverse recovery time
Reverse recovery charge
trr IDR=9A,VGS=0V,
Qrr dIDR / dt =100 A / µs
Min Type Max Unit
- - 9A
- - 36 A
- - 1.4 V
- 335 - ns
- 2.95 - µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=8mH IAS=9A,VDD=50V,RG=25Ω,Starting TJ=25
3.ISD≤9A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, all for your advance
2/7









No Preview Available !

WFF840B Даташит, Описание, Даташиты
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WFF840B
Fig.1 On State Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance Variation vs
Drain Current And Gate Voltage
Fig.4 Body Diode Forward Voltage
Variation with Source Current
and Temperature
Fig.5 Capacitance Characteristis
Fig.6 Gate Charge Characteristics
Steady, all for your advance
3/7










Скачать PDF:

[ WFF840B.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
WFF840N-Channel MOSFETWisdom technologies
Wisdom technologies
WFF840BSilicon N-Channel MOSFETWinsemi
Winsemi

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск