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PDF AMCC921PE Data sheet ( Hoja de datos )
| Número de pieza | AMCC921PE | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Analog Power
AMCC921PE
Dual P-Channel Logical Level MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DFN 3x3 saves board space
• Fast switching speed
• High performance trench technology
PRODUCT SUMMARY
VDS (V)
rDS(on) (OHM)
0.028 @ VGS = -4.5 V
-20 0.045 @ VGS = -2.5V
0.078 @ VGS = -1.8V
ID (A)
6
4.8
3.6
DFN 3x3
Top View
S1 S2
S1 1
G1 2
S2 3
G2 4
8 D G1
7D
G2
6D
D
D
5 D P-Channel MOSFET P-Channel MOSF ET
ESD Protected
2000V
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
www.DataSheet.co.kr
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
-20
V
±8
6
4.9 A
±40
Continuous Source Current (Diode Conduction)a
IS 1.5 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
1.5
1.0
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parame te r
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RthJA
Typ
72
100
Max
83
120
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AMCC921PE_A
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AMCC921PE.PDF ] | |
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