SCS112AG PDF даташит
Спецификация SCS112AG изготовлена «ROHM Semiconductor» и имеет функцию, называемую «SiC Schottky Barrier Diodes». |
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Детали детали
Номер произв | SCS112AG |
Описание | SiC Schottky Barrier Diodes |
Производители | ROHM Semiconductor |
логотип |
4 Pages
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SiC Schottky Barrier Diode
SCS112AG
Applications
Switching power supply
Dimensions (Unit : mm)
Features
1)Shorter recovery time
2)Reduced temperature dependence
3)High-speed switching possible
Construction
Silicon carbide epitaxial planer type
Structure
ROHM : TO-220AC
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive)
Reverse voltage (DC)
Continuous forward current (*1)
Forward current surge peak (60Hz・1cyc) (*2)
Junction temperature
Storage temperature
(*1)Tc=115°C max
(*2)PW=8.3ms sinusoidal
Symbol
VRM
VR
IF
IFSM
Tj
Tstg
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Limits
600
600
12
41
150
55 to 150
Unit
V
V
A
A
°C
°C
Electrical characteristics (Ta=25°C)
Parameter
DC blocking voltage
Forward voltage
Reverse current
Total capacitance
Total capacitive charge
Switching time
Thermal resistance
Symbol
VDC
VF
IR
C
Qc
tc
Rth(j-c)
Min.
600
-
-
-
-
-
-
-
Typ. Max.
--
1.5 1.7
2.4 240
516 -
56 -
22 -
16 -
- 1.6
Unit
V
V
μA
pF
pF
nC
ns
°C/W
Conditions
IR=0.24mA
IF=12A
VR=600V
VR=1V,f=1MHz
VR=600V,f=1MHz
VR=400V,di/dt=350A/μs
VR=400V,di/dt=350A/μs
junction to case
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©2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
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SCS112AG
100
pulsed
Fig.1 VF-IF Characteristics
10
Ta= 125°C
1
Ta= 75°C
Ta= 25°C
0.1 Ta=-25°C
0.01
0.001
0
0.5 1 1.5 2
FORWARD VOLTAGE : VF (V)
2.5
100000
Fig.3 VR-IR Characteristics
10000
1000
100
Ta= 125°C
Ta= 75°C
Ta= 25°C
10 Ta=-25°C
1
0 200 400 600
REVERSE VOLTAGE: VR (V)
Fig.5 Thermal Resistance vs Pulse Width
10
1
0.1
0.01
0.00001 0.0001 0.001 0.01 0.1
Ta=25°C
Single Pulse
1 10 100 1000
PULSE WIDTH : Pw (s)
Data Sheet
18
pulsed
12
Fig.2 VF-IF Characteristics
Ta= 125°C
Ta= 75°C
6
Ta= 25°C
Ta=-25°C
0
0 0.5 1 1.5 2 2.5
FORWARD VOLTAGE : VF (V)
1000
Fig.4 VR-Ct Characteristics
100
10
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Ta=25°C
f=1MHz
1
0.01
0.1 1 10 100
REVERSE VOLTAGE : VR [V]
1000
90
80
70
60
50
40
30
20
10
0
0
Fig.6 Power Dissipation
30 60 90 120
CASE TEMPERATURE : Tc (℃)
150
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.04 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
No Preview Available ! |
SCS112AG
Fig.7 Derating Curve Ip-Tc
70
Duty=0.1
60
50
Duty=0.2
40
30 Duty=0.5
20
Duty=0.8
10
D.C.
0
0 30 60 90 120
CASE TEMPARATURE : Tc (℃)
150
Data Sheet
Fig.8 Io-Pf Characteristics
50
45
D.C.
Duty=0.8
40 Duty=0.5
35 Duty=0.2
Duty=0.1
30
25
20
15
10
5
0
0 5 10 15 20
AVERAGE RECTIFIED FORWARD CURRENT : Io (A)
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www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.04 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
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Номер в каталоге | Описание | Производители |
SCS112AG | SiC Schottky Barrier Diodes | ROHM Semiconductor |
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