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OMS410A PDF даташит

Спецификация OMS410A изготовлена ​​​​«Omnirel» и имеет функцию, называемую «(OMS410 / OMS510) MOSFET».

Детали детали

Номер произв OMS410A
Описание (OMS410 / OMS510) MOSFET
Производители Omnirel
логотип Omnirel логотип 

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OMS410A Даташит, Описание, Даташиты
OMS410 OMS410A
OMS510
3 PHASE, LOW VOLTAGE, LOW RDS(on), MOSFET
BRIDGE CIRCUIT IN A PLASTIC PACKAGE
Three Phase, 100 Volt, 15 To 45 Amp Bridge
With Current And Temperature Sensing
In A Low Profile Package
FEATURES
• Three Phase Power Switch Configuration
• Zener Gate Protection
• 10 Miliohm Shunt Resistor
• Linear Thermal Sensor
• Isolated Low Profile Package
• Output Currents Up To 45 Amps
DESCRIPTION
This series of MOSFET switches is configured in awww.DataSheet.co.kr 3 phase bridge with a common
VDD line, precision series shunt resistor in the source line, and a sensing element to
monitor the substrate temperature. This device is ideally suited for Motor Control
applications where size, performance, and efficiency are key.
MAXIMUM RATINGS (@ 25°C)
Part
Number
OMS410
OMS410A
OMS510
VDS
(Volts)
100
100
100
RDS(on)
(m )
85
85
42
ID
(Amps)
15
20
45
Package
MP-3
MP-3
MP-3
SCHEMATIC
21
65
10 9
32, 33, 34
2.1
4 11 R0
21
22
34 78
2.1 - 53
29, 30, 31
26, 27, 28
23, 24, 25
15,16,17
18,19, 20
1112 13 14
Datasheet pdf - http://www.DataSheet4U.net/









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OMS410A Даташит, Описание, Даташиты
OMS410, OMS410A, OMS510
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
OMS410 OMS410A OMS510
VDS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS = 1 m )
ID @ TC = 25°C
Continuous Drain Current
ID @ TC = 70°C
Continuous Drain Current
IDM Pulsed Drain Current 1
PD @ TC = 25°C
Maximum Power Dissipation 2
PD @ TC = 70°C
Maximum Power Dissipation 2
Junction-To-Case Linear Derating Factor
100
100
15
11
110
33
18
0.33
100
100
20
16
110
33
18
0.33
100
100
45
45
180
66
36
0.66
Thermal Resistance Junction-To-Case
3.0 3.0 1.5
Sense Resistor
0.010
0.010
0.010
Note 1: Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%.
Note 2: Maximum Junction Temperature equal to 125°C.
Units
V
V
A
A
A
W
W
W/°C
°C/W
Ohms
2.1
ELECTRICAL CHARACTERISTICS: OMS410 (TC = 25° unless otherwise specified)
Characteristic
Test Conditions
Symbol
Min.
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID = 250 µA, VGS = 0
Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 70°C
Gate-Body Leakage, VGS = ±12 V
VBRDSS
IDSS
IGSS
100www.DataSheet.co.kr
-
-
-
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS = VGS, ID = 250 µA
Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 9.0 A
Static Drain-Source On-Resistance TC = 70°C
On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10
VGSth
RDSon
IDon
2.0
-
-
15
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS > ID(on) X RDS(on) Max., ID = 9.0 A,
VDS = 25 V,
VGS = 0,
f = 1.0 mHz
gfs
Ciss
Coss
Crss
9.0
-
-
-
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD = 100 V, ID = 15 A,
RGS = 10 , VGS = 10 V
tdon
tr
tdoff
tf
-
-
-
-
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
Source - Drain Current (Pulsed)
Forward On-Voltage
Reverse Recovery Time
Reverse Recovered Charge
ISD = 28 A, VGS = 0,
ISD = 13 A, di/dt = 100 A/µSec
ISD
ISDM*
VSD
trr
Qrr
-
-
-
-
-
RESISTOR CHARACTERISTICS
Resistor Tolerance
Temperature Coefficient, -40°C to +70°C
RS 9.0
Tcr -
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%
Typ. Max.
Unit
--V
- 10 µA
- 100 µA
-
±500
nA
- 4.0 V
- 0.058
- 0.1
--A
- - mho
-
2600
pF
- 910 pF
- 350 pF
- 35 ns
- 290 ns
- 85 ns
- 120 ns
- 14
- 56
- 2.5
133 -
0.85 -
A
A
V
ns
µC
10 11
m
100 - ppm
2.1 - 54
Datasheet pdf - http://www.DataSheet4U.net/









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OMS410A Даташит, Описание, Даташиты
OMS410, OMS410A, OMS510
ELECTRICAL CHARACTERISTICS: OMS520 (TC = 25° unless otherwise specified)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID = 250 µA, VGS = 0
Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 70°C
Gate-Body Leakage, VGS = ±12 V
V(BRDSS
IDSS
IGSS
100
-
-
-
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS = VGS, ID = 250 µA
Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 10 A
Static Drain-Source On-Resistance TC = 70°C
On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10
VGS(th)
RDS(on)
ID(on)
2.0
-
-
20
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS > ID(on) X RDS(on) Max., ID = 10 A
VDS = 25 V,
VGS = 0,
f = 1.0 mHz
gfs
Ciss
Coss
Crss
9.0
-
-
-
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD = 100 V, ID = 20 A,
RGS = 10 , VGS = 10 V
td(on)
tr
td(off)
tf
-
-
-
-
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
Source - Drain Current (Pulsed)
Forward On-Voltage
Reverse Recovery Time
ISD = 28 A, VGS = 0,
ISD = 20 A,
di/dt = 100 A/µSec
Reverse Recovered Charge
ISD
www.DataSheet.co.kr
ISDM*
VSD
trr
Qrr
-
-
-
-
-
RESISTOR CHARACTERISTICS
Resistor Tolerance
Temperature Coefficient, -40°C to +70°C
RS 9.0
Tcr -
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%.
Typ. Max.
Unit
--V
- 10 µA
- 100 µA
-
±500
nA
- 4.0 V
- 0.058
- 0.100
--A
- - mho
-
2600
pF
- 910 pF
- 350 pF
- 35 ns
- 290 ns
- 85 ns
- 120 ns
- 20
- 56
- 2.5
133 -
0.85 -
A
A
V
ns
µC
10 11 m
100 - ppm
2.1
2.1 - 55
Datasheet pdf - http://www.DataSheet4U.net/










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