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Número de pieza | HMC1015 | |
Descripción | GaAs MMIC | |
Fabricantes | Hittite | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HMC1015 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Typical Applications
The HMC1015 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• Military End-Use
Functional Diagram
HMC1015
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
Features
Passive: No DC Bias Required
High Input IP3: 20 dBm
High LO/RF Isolation: 45 dB
High 2LO/IF Isolation: 50 dB
Wide IF Bandwidth: 16 - 22 GHz
Upconversion & Downconversion Applications
Die Size: 1.14 x 1.1 x 0.1 mm
General Description
The HMC1015 is a general purpose triple balanced
mixer chip that can be used as a frequency converter
with 16 to 22 GHz at the IF port and 26 to 32 GHz at
the RF port. This mixer requires no external
components or matching circuitry. The HMC1015
provides excellent LO/RF, LO/IF and 2LO/IF isolation
due to optimized balun structures. The mixer operates
with LO drive levels from +9 dBm to +15 dBm. The
HMC1015 wideband mixer exhibits consistent
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conversion gain and compression across its band-
width.
Electrical Specifications, TA = +25° C, LO = 9 GHz, LO = +13 dBm [2]
Parameter
Min. Typ. Max.
RF Frequency Range
IF Frequency Range
LO Frequency Range
Conversion Loss
LO to RF Isolation [1]
LO to IF Isolation [1]
2LO to IF Isolation [1]
RF to IF Isolation
IP3 (Input)
26 - 32
16- 22
7 - 11
10
45
31
50
35
22
13
1 dB Gain Compression (Input)
10
[1] Fixed IF = 17 GHz.
[2] Unless otherwise noted , all measurements performed as an upconverter with LO = 9 GHz.
Units
GHz
GHz
GHz
dB
dB
dB
dB
dB
dBm
dBm
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page v00.0811
Table 1. Absolute Maximum Ratings
RF / IF Input (LO = +18 dBm)
LO Drive
Maximum Junction Temperature
Continuous Pdiss (Ta = 85 °C)
(derate 2.5 mW/°C above 85 °C)
15.5 dBm
20 dBm
150 °C
79 mW
Thermal Resistance (RTH)
(junction to die bottom)
Operating Temperature
Storage Temperature
392 °C/W
-55°C to +85°C
-65°C to 125°C
Outline Drawing
HMC1015
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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Table 2. Die Packaging Information [1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] For more information refer to the “Packaging
information” Document in the Product Support Section of
our website.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS 0.004”
3. BOND PADS 1, 2 & 3 are 0.0059” [0.150] X 0.0039” [0.099].
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. Overall die size ± 0.002
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
5
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page |
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