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WJA1010 PDF даташит

Спецификация WJA1010 изготовлена ​​​​«TriQuint Semiconductor» и имеет функцию, называемую «Active-Bias InGaP HBT Gain Block».

Детали детали

Номер произв WJA1010
Описание Active-Bias InGaP HBT Gain Block
Производители TriQuint Semiconductor
логотип TriQuint Semiconductor логотип 

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WJA1010 Даташит, Описание, Даташиты
WJA1010
+5V Active-Bias InGaP HBT Gain Block
Product Features
Product Description
Functional Diagram
Cascadable gain block
50 – 2300 MHz
15 dB Gain
+19 dBm P1dB
+36.5 dBm OIP3 @ 900MHz
Operates from +5V @ 85mA
Robust 1000V ESD, Class 1C
RoHS-compliant SOT-89 package
Applications
Wireless Infrastructure
General Purpose
CATV / FTTH
VHF / UHF Transmission
The WJA1010 is a cascadable gain block that offers high
linearity in a low-cost surface-mount package. At 900
MHz, the WJA1010 typically provides 15 dB gain, +36.5
dBm OIP3, and +19 dBm P1dB. The device is housed in a
RoHS-compliant SOT-89 industry-standard SMT package
using a NiPdAu plating to eliminate the possibility of tin
whiskering.
The WJA1010 consists of Darlington pair amplifiers using
a high reliability InGaP/GaAs HBT process technology.
The MMIC amplifier is internally matched to 50Ω and only
requires DC-blocking capacitors and a bias inductor for
operation. An internal active bias is designed to enable
stable performance over temperature. A dropping bias
resistor is not required allowing the device to be biased
directly from a +5V supply voltage.
The broadband amplifier can be directly applied to various
current and next generation wireless technologies such as
GSM, PCS, and W-CDMA. The WJA1010 is ideal for
general purpose applications such as LO buffering, IF
amplification and pre-driver stages within the 50 to 2300
MHz frequency range.
GND
4
1
RF IN
2
GND
3
RF OUT
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications (1)
Typical Performance (3)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Device Voltage
Device Current
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
Min
50
13.5
+33
72
Typ
900
15
13
17
+19
+36.4
+48.1
5.2
5
85
Max
2300
16.5
92
1. Test conditions: 25 ºC, Supply Voltage = +5 V, 50 System. S-parameters and 3OIP measured at
device pins. All other specifications measured on evaluation board.
2. 3OIP measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. The suppression
on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Parameter
Frequency
www.DataSheet.net/
S21
S11
S22
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
200
14.9
-13
-20
+19.6
+41.8
+55.3
4.8
Typical
500
14.7
-14
-18
+19.5
+40.3
+54.2
5
900
14.5
-17
-17
+19
+36.2
+48.1
5.2
1900
14
-17
-9
+16.2
+28.7
+40.3
5.7
3. Listed typical performance parameters measured on evaluation board.
2100
14.2
-17
-10
+15
+27.2
+39.7
6.2
Not Recommended For
New Designs
Recommended replacement parts:
TQP3M9028
Absolute Maximum Rating
Parameter
Storage Temperature
Supply Voltage
Input Power
θjc (junction to paddle)
Maximum Junction Temperature
Rating
-55 to +150 °C
+6.5 V
+24 dBm
80.6 °C / W
150 °C
Ordering Information
Part No.
WJA1010
Description
+5V Active Bias InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Package)
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 1000 pieces on a 7reel
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com
Page 1 of 4 June 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/









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WJA1010 Даташит, Описание, Даташиты
WJA1010
+5V Active-Bias InGaP HBT Gain Block
Typical Evaluation Board RF Performance
Supply Bias = +5V, Icc = 85 mA
Gainvs. Frequency
16
14
Return Loss
T= 25C
0
-5
-10
NoiseFigure vs. Frequency
10
9
8
7
12 -15 6
-20
10
-25 S11 S22
-40C +25C +85C
5
4
3 -40C +25C +85C
8 -30 2
0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500
Frequency (MHz)
Frequency (MHz)
Frequency(MHz)
OIP3 vs. Output Power
45
OIP3vs. Frequency
Pout=8 dBm/tone, T= 25°C
45
OIP3 vs. Vcc
Freq= 900MHz
45
40 40 40
35 35 35
30 30 30
25 25
0 2 4 6 8 10 0
Output Power per tone(dBm)
OIP2 vs. Frequency
Pout =8dBm/tone
60
22
500 1000
Frequency (MHz)
www.DataSheet.net/
P1dBvs. Frequency
1500
25
2000 4.7 4.8 4.9 5.0 5.1 5.2
Vcc (V)
P1dBvs. Vcc
Freq=900MHz
22
55 20 20
50 18 18
45 16 16
40 14 14
-40C +25C +85C
35 12 12
0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500 4.7 4.8 4.9 5 5.1 5.2
Frequency (MHz)
Frequency(MHz)
SupplyVoltage(V)
Iccvs. Temperature
95 Vcc=+5V
Iccvs. Vcc
140
120
90
100
85 80
60
80
40 -40C +25C +85C
75
-50 -25 0 25 50
Temperature (°C)
20
75 100
4.0
4.5 5.0 5.5
Vcc (V)
6.0
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com
Page 2 of 4 June 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/









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WJA1010 Даташит, Описание, Даташиты
WJA1010
+5V Active-Bias InGaP HBT Gain Block
Vcc =+5.00V
Icc = 85 mA
Application Circuit
R4
0
C3
Bypass
Capacitor
RF IN
C1
Blocking
Capacitor
R1
0
L1
RF Choke
WJA1010
R2
0
RF OUT
C2
Blocking
Capacitor
Recommended Component Values (1)
Ref. Name Value / Type
Size
L1 470 nH ferrite core wire wound inductor (2) 0805
C1, C2
1000 pF NPO chip capacitor
0603
C3 0.018 µF chip capacitor
0603
R1, R2, R4 0 (3)
C4, R3, R5 Do Not Place (3)
0603
1. The listed values are contained on the evaluation board to achieve optimal broadband performance
2. For lower cost and performance (500 – 2000 MHz) option use 39 nH air core wire wound inductor.
3. Place holders for the 0resistors and “Do Not Place” references are not needed for final design.
Typical Device Data
www.DataSheet.net/
S-Parameters (Vdevice = +5 V, ICC = 85 mA, T = 25 °C, calibrated to device leads)
Freq
S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB)
10
-12.04
-60.82
19.05
165.91
-22.30
50
-13.71
-143.09
15.80
165.50
-19.42
100
-13.82
-161.46
15.31
167.89
-19.20
200
-13.85
-171.92
15.10
164.60
-19.10
300
-13.69
-175.70
15.07
159.95
-19.10
400
-13.65
-177.47
15.10
154.59
-19.11
500
-13.43
-178.71
15.03
148.80
-19.09
600
-13.21
-179.92
15.05
143.18
-19.13
700
-13.21
-179.29
15.03
137.23
-19.11
800
-13.13
-176.94
15.00
131.54
-19.09
900
-13.25
-175.80
14.95
125.63
-19.05
1000
-13.40
-171.04
15.00
120.03
-19.11
1100
-13.45
-167.86
14.89
114.13
-19.05
1200
-13.70
-163.82
14.90
107.42
-19.14
1300
-13.71
-160.39
14.87
101.34
-19.05
1400
-13.73
-157.23
14.79
95.53
-19.02
1500
-13.78
-154.96
14.80
89.31
-19.12
1600
-13.91
-152.71
14.77
82.83
-19.12
1700
-13.94
-151.56
14.73
76.51
-19.00
1800
-14.25
-151.18
14.70
70.01
-19.05
1900
-14.68
-150.94
14.67
63.49
-19.02
2000
-15.46
-152.07
14.63
57.47
-19.12
2100
-16.40
-152.54
14.57
50.95
-19.10
2200
-17.65
-156.49
14.43
44.02
-19.15
2300
-19.22
-161.75
14.23
37.40
-19.19
2400
-20.22
-172.76
14.15
30.44
-19.32
S12 (ang)
19.64
6.67
2.07
-2.47
-5.78
-8.12
-10.48
-13.54
-15.47
-18.52
-20.44
-23.46
-26.31
-28.31
-30.76
-33.72
-36.32
-39.05
-41.55
-44.05
-47.20
-49.85
-53.35
-55.79
-59.36
-61.81
S22 (dB)
-8.59
-15.87
-18.24
-19.29
-19.50
-19.68
-19.49
-19.48
-18.92
-18.76
-17.98
-17.13
-16.34
-15.63
-14.87
-14.42
-13.84
-13.62
-13.13
-12.85
-12.32
-11.74
-11.20
-10.43
-9.87
-9.02
Device S-parameters are available for download from the website at: http://www.triquint.com
S22 (ang)
-41.53
-109.00
-135.07
-152.17
-157.22
-160.24
-161.23
-164.03
-161.58
-162.42
-159.66
-160.05
-157.69
-158.10
-157.31
-157.48
-158.93
-159.31
-160.67
-161.89
-164.74
-165.33
-168.18
-171.27
-174.30
-176.99
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com
Page 3 of 4 June 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/










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