|
|
PDF HMC995LP5GE Data sheet ( Hoja de datos )
| Número de pieza | HMC995LP5GE | |
| Descripción | GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT | |
| Fabricantes | Hittite | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HMC995LP5GE (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
HMC995LP5GE
v00.0611
GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT
WITH POWER DETECTOR, 12 - 16 GHz
Typical Applications
The HMC995LP5GE is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Features
Intergrated Power Detector
Saturated Output Power: 35.5 dBm @ 24% PAE
High Output IP3: 41 dBm
High Gain: 27 dB
DC Supply: +5V to +7V @ 1200 mA
No External Matching Required
Functional Diagram
General Description
The HMC995LP5GE is a 4 stage GaAs pHEMT MMIC
2 Watt Power Amplifier with an integrated temperature
compensated on-chip power detector which operates
between 12 and 16 GHz. The HMC995LP5GE provides
27 dB of gain, 35.5 dBm of saturated output power,
and 24% PAE from a +7V supply. The HMC995LP5GE
exhibits excellent linearity and is optimized for high
capacity digital microwave radio. It is also ideal for
13.75 to 14.5 GHz Ku Band VSAT transmitters as
www.DataSheet.net/
well as SATCOM applications. The HMC995LP5GE
amplifier I/Os are internally matched to 50 Ohms
and is packaged in a leadless QFN 5x5 mm surface
mount package and requires no external matching
components.
Electrical Specifications
TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200 mA [1]
Parameter
Min. Typ. Max.
Frequency Range
12 - 16
Gain [3]
24 27
Gain Variation Over Temperature
0.03
Input Return Loss
9
Output Return Loss
15
Output Power for 1 dB Compression (P1dB)
32 34.5
Saturated Output Power (Psat)
35.5
Output Third Order Intercept (IP3)[2]
41
Total Supply Current (Idd)
[1] Adjust (Vgg1=Vgg2=Vgg3) between -2 to 0V to achieve Idd = 1200mA typical.
[2] Measurement taken at +7V @ 1200mA, Pout / Tone = +22 dBm
[3] Board loss subtracted out
1200
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
HMC995LP5GE
v00.0611
GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT
WITH POWER DETECTOR, 12 - 16 GHz
Detector Voltage vs. Frequency &
Temperature
10
12.5 GHz +25C
12.5 GHz +85C
12.5 GHz -40C
1
15.5 GHz +25C
15.5 GHz +85C
15.5 GHz -40C
0.1
0.01
-5
3 11 19 27
OUTPUT POWER (dBm)
35
Reverse isolation vs. Temperature
0
-10 +25C
-20
+85C
-40C
-30
-40
-50
-60
-70
-80
-90
11 12 13 14 15 16
FREQUENCY (GHz)
17
Gain & Power vs.
Supply Current @ 14 GHz
40
35
30
25
20
15
1000
1050
GAIN
P1dB
Psat
1100
Idd (mA)
1150
1200
Gain & Power vs.
Supply Voltage @ 14 GHz
50
45
40
www.DataSheet.net/
35
GAIN
P1dB
Psat
30
25
20
5
5.5 6 6.5
Vdd (V)
7
Power Dissipation
12
10
8
6
13 GHz
4 14 GHz
15 GHz
2
0
-10 -8 -6 -4 -2 0 2 4 6 8 10
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
5
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC995LP5GE.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HMC995LP5GE | GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT | Hittite |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |