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PDF HMC996LP4E Data sheet ( Hoja de datos )
| Número de pieza | HMC996LP4E | |
| Descripción | Variable Gain Amplifier | |
| Fabricantes | Hittite | |
| Logotipo |  |
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v00.0511
0 Typical Applications
The HMC996LP4E is ideal for:
• Point-to-Point Radio
• Point-to-Multi-Point Radio
• EW & ECM Subsystems
• X-Band Radar
• Test Equipment & Sensors
Functional Diagram
HMC996LP4E
Variable Gain Amplifier
5 to 12 GHz
Features
Wide Gain Control Range: 22 dB
Single Control Voltage: -1 to -4.5V
Output IP3 @ Max Gain: +34 dBm
Output P1dB: +22 dBm
Low Noise Figure 2dB @ max gain
No External Matching
24 Lead 4x4 mm SMT Package: 16 mm2
General Description
The HMC996LP4E is a GaAs PHEMT MMIC analog
variable gain amplifier and / or driver amplifier which
operates between 5 and 12 GHz. Ideal for microwave
radio applications, the amplifier provides up to 18.5
dB of gain, output P1dB of up to +23 dBm, and up
to +34 dBm of output IP3 at maximum gain, while
requiring only 170 mA from a +5V supply. Gain
control voltage pin (Vctrl) is provided to allow variable
gainwww.DataSheet.net/ control up to 22 dB. Gain flatness is excellent
making the HMC996LP4E ideal for EW, ECM and
radar applications. The HMC996LP4E is housed in
a RoHS compliant 4 x 4 mm QFN leadless package
and is compatible with high volume surface mount
manufacturing.
0-1
Electrical Specifications, TA = +25°C, Vdd1, 2= 5V, Vctrl= -4.5V, Idd= 120 mA*
Parameter
Min. Typ. Max.
Frequency Range
5 - 8.5
Gain
Gain Flatness
16 18.5
±0.5
Gain Variation Over Temperature
0.006
Gain Control Range
15 22
Noise Figure
2.5
Input Return Loss
17
Output Return Loss
Output Power for 1 dB Compression (P1dB)
19
23
22
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
23
34
Total Supply Current (Idd)
120
*Set Vctrl = -4.5V and then adjust Vgg1, 2 between -2V to 0V to achieve Idd = 120 mA typical.
Min.
13
15
20
Typ.
8.5 - 12
16
±1
0.006
20
2
9
7
23
24
34
120
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dB
dBm
dBm
dBm
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
v00.0511
0
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, 2)
Gate Bias Voltage (Vgg1, 2)
Gain Control Voltage (Vctrl)
RF Power Input
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 11.5 mW/°C above 85 °C) [1]
Thermal Resistance
(Channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5V
-3 to 0V
-5 to 0V
+20 dBm
175 °C
1.03 W
86.7 °C/W
-65 to +150 °C
-40 to +85 °C
Class 0 Passed 150V
Outline Drawing
HMC996LP4E
Variable Gain Amplifier
5 to 12 GHz
Bias Voltage
Vdd1,2(V)
+5V
Vgg1,2 (V)
0V to -2V
Idd Total (mA)
120 mA
Igg Total (mA)
<0.1 mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
www.DataSheet.net/
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST
BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
HMC996LP4E RoHS-compliant Low Stress Injection Molded Plastic
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
Lead Finish
100% matte Sn
MSL Rating
MSL1 [1]
Package Marking [2]
H996
XXXX
0-5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC996LP4E.PDF ] | |
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