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PDF HMC999 Data sheet ( Hoja de datos )
| Número de pieza | HMC999 | |
| Descripción | GaN MMIC 10 WATT POWER AMPLIFIER | |
| Fabricantes | Hittite | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC999 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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v01.0112
HMC999
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
Typical Applications
The HMC999 is ideal for:
• Test Instrumentation
• Military Communications
• Jammers and Decoys
• Radar, EW & ECM Subsystems
• Space
Functional Diagram
Features
High P1dB Output Power: 38 dBm
High Psat Output Power: 40 dBm
High Output IP3: 47 dBm
High Gain: 11 dB
Supply Voltage: +28V, +40V or +48V @ 1100 mA
50 Ohm Matched Input/Output
Die Size: 3.66 x 1.91 x 0.1 mm
General Description
The HMC999 is a GaN HEMT MMIC Distributed
Power Amplifier which operates between 0.01 and 10
GHz. The amplifier provides 11 dB of gain, 47 dBm
output IP3 and 38 dBm of output power at 1 dB gain
compression while requiring 1100 mA from a +48 V
supply. The HMC999 amplifier provides 10 Watts of
saturated power in a chip area only 7 mm2, equating
to a power density of 1.5 W/mm2 over 3 decades of
www.DataSheet.net/
bandwidth. All data is taken with the chip connected
via two 0.025 mm (1 mil) wire bonds of minimal length
0.31 mm (12 mils).
Electrical Specifications, TA = +25°C [2], Vdd = +48 V, Vgg2 = +22 V, Idd = 1100 mA* [1]
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range
0.01 - 2
2-6
6 - 10
GHz
Gain
10.5 12.5
9 11
8.5 10.5
dB
Gain Flatness
±0.8
±0.4
±0.7
dB
Gain Variation Over Temperature
0.017
0.02
0.025
dB/ °C
Input Return Loss
20 18 15 dB
Output Return Loss
13 15 14 dB
Output Power for 1 dB Compression (P1dB)
36.5
38.5
36 38
34.5
36.5
dBm
Saturated Output Power (Psat)
40.5
40
39.5
dBm
Output Third Order Intercept (IP3)
48
47
45.5
dBm
Supply Current
(Idd) (Vdd = 48V, Vgg = 22V Typ.)
1100
1100
1100
mA
* Adjust Vgg1 between -5 to 0 V to achieve Idd = 1100 mA typical.
[1] S parameter and OIP3 data taken at Idd=1000mA
[2] Probe station chuck temperature adjusted to bring backside of die to +25°C
Products and Product Information are Subject to Change Without Notice.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
v01.0112
HMC999
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
Reverse Isolation vs. Temperature
0
-10
+25C
+85C
-20
-30
-40
-50
-60
-70
0 1 2 3 4 5 6 7 8 9 10
FREQUENCY (GHz)
Power Compression @ 4 GHz
45
40 Pout
35
Gain
PAE
30
25
20
15
10
5
0
0 4 8 12 16 20 24
INPUT POWER (dBm)
1800
1600
1400
1200
1000
800
Idd 600
400
200
0
28 32
Power Dissipation
60
56
4 GHz
8 GHz
52
48
www.DataSheet.net/
44
40
0 4 8 12 16 20 24 28 32
INPUT POWER (dBm)
Products and Product Information are Subject to Change Without Notice.
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC999.PDF ] | |
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