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PDF NTNS3A65PZ Data sheet ( Hoja de datos )
| Número de pieza | NTNS3A65PZ | |
| Descripción | Small Signal MOSFET | |
| Fabricantes | ON Semiconductor | |
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NTNS3A65PZ
Small Signal MOSFET
−20 V, −281 mA, Single P−Channel,
SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm
Package
Features
• Single P−Channel MOSFET
• Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for
Extremely Thin Environments Such as Portable Electronics
• Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package
• 1.5 V Gate Drive
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Side Switch
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Solutions
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t≤5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−20
±8
−281
−202
−332
155
V
V
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mA
mW
t≤5s
218
Pulsed Drain
Current
tp = 10 ms
IDM −842 mA
Operating Junction and Storage
Temperature
TJ, TSTG −55 to
150
°C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS −130 mA
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
or 2 mm2, 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
http://onsemi.com
V(BR)DSS
−20 V
RDS(on) MAX
1.3 W @ −4.5 V
2.0 W @ −2.5 V
3.4 W @ −1.8 V
4.5 W @ −1.5 V
ID Max
−281 mA
P−CHANNEL MOSFET
S (2)
G (1)
D (3)
MARKING
3 DIAGRAM
SOT−883 (XDFN3)
2 1 CASE 506CB
65 M
65 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NTNS3A65PZT5G SOT−883 8000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
NTNS3A65PZ/D
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
NTNS3A65PZ
TYPICAL CHARACTERISTICS
900
800
700
600
500
400
300
200 0.2
100 0.1
0
0.000001
Duty Cycle = 0.5
0.01 0.02 0.05
0.00001
0.0001
Single Pulse
0.001
0.01 0.1
PULSE TIME (sec)
Figure 13. Thermal Response
1
RqJA steady state = 804°C/W
10 100 1000
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http://onsemi.com
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
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