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BCY79 PDF даташит

Спецификация BCY79 изготовлена ​​​​«Comset Semiconductors» и имеет функцию, называемую «(BCY78 / BCY79) SILICON PLANAR EPITAXIAL TRANSISTORS».

Детали детали

Номер произв BCY79
Описание (BCY78 / BCY79) SILICON PLANAR EPITAXIAL TRANSISTORS
Производители Comset Semiconductors
логотип Comset Semiconductors логотип 

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BCY79 Даташит, Описание, Даташиты
PNP BCY78 – BCY79
SILICON PLANAR EPITAXIAL TRANSISTORS
The BCY78 and BCY79 are PNP transistors mounted in TO-18 metal package with the
collector connected to the case .
They are designed for use in audio drive and low-noise input stages.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCES
VEBO
IC
IB
PD
PD
TJ
TStg
Collector-Emitter Voltage (IB =0)
Collector-Emitter Voltage (VBE =0)
Emitter-Base Voltage (IC =0)
Collector Current
Base Current
Total Power
Dissipation
Total Power
Dissipation
@ Tamb = 25°
@ Tcase= 45°
Junction Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
www.DataSheet.net/
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
Value
-45
-32
-45
-32
-5
-5
-200
-20
390
1
200
-65 to +150
Unit
V
V
V
mA
mA
mW
W
°C
°C
Value
450
150
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/4
Datasheet pdf - http://www.DataSheet4U.co.kr/









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BCY79 Даташит, Описание, Даташиты
PNP BCY78 – BCY79
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICES
ICES
IEBO
VCEO
VEBO
VCE(SAT)
VBE(SAT)
VBE
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff
Current
Collector Emitter
Breakdown
Voltage
Emitter Base
Breakdown
Voltage
Collector-Emitter
saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Voltage
VCB =-35 V, VBE =0V
VCB =-25 V, VB =0V
VCB =-35 V
VBE =0V,Tj =150°C
VCB =-25 V
VBE =0V,Tj =150°C
VBE =-4.0 V, IC =0
IC =-2 mA, IB =0
IE =-1µA, IC =0
IC =-10 mA
IB =-0.25 mA
IC =-100 mA
IB =-2.5 mA
IC =-10 mA
I B=-0.25 mA
IC =-100 mA
IB =-2.5 mA
IC =-10 µA
VCE =-5 V
IC =-2 mA
VCE =-5 V
IC =-10 mA
VCE =-1 V
IC =-100 mA
VCE =-1 V
www.DataSheet.net/
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
- - -20 nA
- - -10 µA
- - -20 nA
-45 -
-32 -
-
-V
-5 -
-V
- -0.12 -0.25
- -04 -08
-0.6 -0.7 -0.85
V
-0.7 -0.85 -1.2
- -0.55 -
-0.6 -0.65 -0.75
- -0.68 -
V
- -0.75 -
Symbol
Ratings
hFE
DC Current Gain
hfe Small-Signal
Current Gain
18/10/2012
Test Condition(s)
IC =-10 µA, VCE =-5 V
IC =-2 mA, VCE =-5 V
IC =-10 mA, VCE =-1 V
IC =-100 mA, VCE =-1 V
IC =2 mA, VC E=5 V
f = 1kHz
BCY79VII
BCY78VII
-
Typ.140
>120
<220
>80
-
>40
>125
<250
BCY79VIII
BCY78VIII
>30
Typ.200
>180
<310
>120
<400
>45
>175
<350
COMSET SEMICONDUCTORS
BCY79IX
BCY78IX
>40
Typ.270
>250
<460
>160
<630
>60
>250
<500
BCY79X
BCY78X
>100
Typ.390
>380
<630
>240
<1000
>60
>350
<700
2/4
Datasheet pdf - http://www.DataSheet4U.co.kr/









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BCY79 Даташит, Описание, Даташиты
PNP BCY78 – BCY79
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
fT
Transition
frequency
F
Noise figure ,
RS=2k
td Delay time
tr Rise time
ton Turn on time
ts Storage time
tf Fall time
toff Turn off time
td Delay time
tr Rise time
ton Turn on time
ts Storage time
tf Fall time
toff Turn off time
CC
Collector
capacitance
CE
Emitter
capacitance
Test Condition(s)
IC =-10 mA, VCE =-5 V
f = 100MHz
IC =-200 µA, VCE =-5 V
f = 1kHz, B =200Hz
ICon =-10 mA
IBon = -IBoff = -1mA
VBB =3.6 V
R1= R2 = 5k
RL = 990
www.DataSheet.net/
ICon =-100 mA
IBon = -IBoff = -10mA
VBB =5 V
R1= 500
R2 = 700
RL = 98
IE = Ie = 0 ,VCB =-10 V
f = 1MHz
IC = Ic = 0 ,VEB =-0.5 V
f = 1MHz
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
Min Typ Max Unit
- 180 - MHz
- 2 6 db
- 35 -
- 50 -
- 85 150
ns
- 400 -
- 80 -
- 480 800
-5-
- 50 -
- 55 150
ns
- 250 -
- 200 -
- 450 800
- - 5 pF
- - 15 pF
18/10/2012
COMSET SEMICONDUCTORS
3/4
Datasheet pdf - http://www.DataSheet4U.co.kr/










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