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BD135 PDF даташит

Спецификация BD135 изготовлена ​​​​«Comset Semiconductors» и имеет функцию, называемую «(BD135 - BD139) SILICON PLANAR EPITAXIAL POWER TRANSISTORS».

Детали детали

Номер произв BD135
Описание (BD135 - BD139) SILICON PLANAR EPITAXIAL POWER TRANSISTORS
Производители Comset Semiconductors
логотип Comset Semiconductors логотип 

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BD135 Даташит, Описание, Даташиты
NPN BD135 – BD137 – BD139
SILICON PLANAR EPITAXIAL POWER TRANSISTORS.
The BD135-BD137-BD139 are NPN Transistors
They are recommended for driver stages in hi-fi amplifiers and television circuits.
They are mounted in Jedec TO-126 plastic package.
PNP complements are BD136-BD138-BD140.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VCER
VEBO
IC
IB
PT
TJ
TStg
Ratings
Collector-Base Voltage (IE= 0)
Collector-Emitter Voltage (IB= 0)
www.DataSheet.net/
Collector-Emitter Voltage (RBE= 1 kΩ)
Emitter-Base Voltage (IC= 0)
Collector Current
Base current
Total power Dissipation
Junction Temperature
Storage Temperature
BD135
BD137
BD139
BD135
BD137
BD139
BD135
BD137
BD139
IC
ICM
IB
Tmb = 70°C
Value
45
60
100
45
60
80
45
60
100
5
1.5
2
0.5
8
150
-65 to +150
Unit
V
V
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-c
RthJ-a
Thermal Resistance, Junction-Case
Thermal Resistance, Junction-ambient in free air
Value
10
100
Unit
°C/W
°C/W
25/09/2012
27/08/201225/09/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/









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BD135 Даташит, Описание, Даташиты
NPN BD135 – BD137 – BD139
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
BD135
- - 0,1
IE=0 , VCB= 30 V
BD137
- - 0,1
ICBO
Collector cut-off
current
IE=0 ,VCB = 30V
Tj= 125°C
BD139
BD135
BD137
BD139
-
-
-
-
0,1
10
µA
- - 10
- - 10
IEBO
VCEO(SUS)
Emitter cut-offcurrent
Collector-Emitter
sustaning Voltage (1)
IC=0, VEB=5 V
IB=0 , IC=30 mA
BD135
BD137
BD139
- - 10 µA
45 -
-
60 - - V
80 -
-
VCE(SAT)
Collector-Emitter
saturation Voltage (1)
IC=0.5 A,IB=50 mA
- - 0,5 V
VCE=2 V, IC=5 mA
25 -
-
BDxxx
40 - 250
hFE
DC Current Gain (1) VCE=2 V, IC=150 mA BDxxx -10 63
- 160
BDxxx -16 100 - 250
www.DataSheet.net/
VCE=2 V, IC=500 mA
25 -
-
VBE
Base-Emitter
Voltage(1)
VCE=2 V, IC=500 mA
- - 1V
fT
Transition frequency VCE=5 V, IC=50 mA , f= 35 MHz
- 250 - MHz
1. Measured under pulse conditions :tP <300µs, δ <2%.
25/09/2012
27/08/201225/09/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/









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BD135 Даташит, Описание, Даташиты
NPN BD135 – BD137 – BD139
MECHANICAL DATA CASE TO-126
A
B
C
D
E
F
G
L
M
N
P
S
Pin 1 :
Pin 2 :
Pin 3 :
DIMENSIONS
min max
7.4 7.8
10.5 10.8
2.4 2.7
0.7 0.9
2.25 typ.
0.49 0.75
4.4 typ.
15.7 typ.
1.27 typ.
3.75 typ.
3.0 3.2
2.54 typ.
Emitter
Collector
Base
www.DataSheet.net/
Revised August 2012
         
 
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to
change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically
disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not
authorized for use as critical components in life support devices or systems.
 
 
www.comsetsemi.com
25/09/2012
27/08/201225/09/2012
COMSET SEMICONDUCTORS
3|3
Datasheet pdf - http://www.DataSheet4U.co.kr/










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