DataSheet26.com

NTLUS4930N PDF даташит

Спецификация NTLUS4930N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTLUS4930N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

7 Pages
scroll

No Preview Available !

NTLUS4930N Даташит, Описание, Даташиты
NTLUS4930N
Power MOSFET
30 V, 6.1 A, Single NChannel,
2.0x2.0x0.55 mm mCoolt UDFN6 Package
Features
UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Battery Switch
Power Load Switch
DCDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Continuous Drain
Current (Note 1)
Steady
State
t5s
Power Dissipa-
tion (Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
6.1
4.4
9.3
1.65
V
V
http://www.DataSheet4U.net/
A
W
Continuous Drain
Current (Note 2)
t5s
Steady
State
Power Dissipation (Note 2)
Pulsed Drain Current
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
tp = 10 ms
MOSFET Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
ID
PD
IDM
TJ,
TSTG
IS
TL
3.8
3.8
2.8
0.65
19
-55 to
150
1.65
260
A
W
A
°C
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
© Semiconductor Components Industries, LLC, 2013
February, 2013 Rev. 1
1
http://onsemi.com
V(BR)DSS
30 V
MOSFET
RDS(on) MAX
36 mW @ 4.5 V
28.5 mW @ 10 V
ID MAX
6.1 A
5.5 A
D
G
S
NCHANNEL MOSFET
S
Pin 1
MARKING DIAGRAM
D
UDFN6
(mCOOL])
1
AD MG
CASE 517BG
G
AD = Specific Device Code
M = Date Code
G = PbFree Package
(*Note: Microdot may be in either location)
PIN CONNECTIONS
D1
D2
G3
D
S
(Top View)
6D
5D
4S
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
NTLUS4930N/D
datasheet pdf - http://www.DataSheet4U.net/









No Preview Available !

NTLUS4930N Даташит, Описание, Даташиты
NTLUS4930N
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t 5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.
Symbol
RθJA
RθJA
RθJA
Max
75.7
32.9
191.4
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
ID = 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 6.1 A
VGS = 4.5 V, ID = 5.5 A
VDS = 1.5 V, ID = 6.0 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1 MHz,
VDShttp://www.DataSheet4U.net/
=
15
V
VGS = 4.5 V, VDS = 15 V;
ID = 5.5 A
VGS = 10 V, VDS = 15 V;
ID = 5.5 A
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6)
VGS = 4.5 V, VDD = 15 V,
ID = 5.5 A, RG = 3 W
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDD = 15 V,
ID = 6.1 A, RG = 3 W
Forward Diode Voltage
VSD VGS = 0 V,
IS = 1.65 A
5. Pulse Test: pulse width 300 ms, duty cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
TJ = 25°C
TJ = 125°C
Min Typ Max
Units
30
+16
V
mV/°C
1.0 mA
10 mA
1.2 1.8 2.2
V
4.4 mV/°C
19 28.5
mW
27 36
16 S
476 pF
197
100
4.8 nC
0.4
1.54
2.15
8.7 nC
8.7
14.4
9.1
3.3
4.1
12.2
11.6
2.2
0.80 1.0
0.67
ns
ns
V
http://onsemi.com
2
datasheet pdf - http://www.DataSheet4U.net/









No Preview Available !

NTLUS4930N Даташит, Описание, Даташиты
NTLUS4930N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
DRAIN-SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 3.3 A
Reverse Recovery Charge
QRR
5. Pulse Test: pulse width 300 ms, duty cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min Typ Max Units
14.6 ns
6.8
7.8
5.4 nC
DEVICE ORDERING INFORMATION
Device
Package
Shipping
NTLUS4930NTAG
UDFN6
(PbFree)
3000 / Tape & Reel
NTLUS4930NTBG
UDFN6
(PbFree)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://www.DataSheet4U.net/
http://onsemi.com
3
datasheet pdf - http://www.DataSheet4U.net/










Скачать PDF:

[ NTLUS4930N.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTLUS4930NPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск