NTLUS4930N PDF даташит
Спецификация NTLUS4930N изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTLUS4930N |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
7 Pages
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NTLUS4930N
Power MOSFET
30 V, 6.1 A, Single N−Channel,
2.0x2.0x0.55 mm mCoolt UDFN6 Package
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
• Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Battery Switch
• Power Load Switch
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Continuous Drain
Current (Note 1)
Steady
State
t≤5s
Power Dissipa-
tion (Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
6.1
4.4
9.3
1.65
V
V
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A
W
Continuous Drain
Current (Note 2)
t≤5s
Steady
State
Power Dissipation (Note 2)
Pulsed Drain Current
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
tp = 10 ms
MOSFET Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
ID
PD
IDM
TJ,
TSTG
IS
TL
3.8
3.8
2.8
0.65
19
-55 to
150
1.65
260
A
W
A
°C
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
© Semiconductor Components Industries, LLC, 2013
February, 2013 − Rev. 1
1
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V(BR)DSS
30 V
MOSFET
RDS(on) MAX
36 mW @ 4.5 V
28.5 mW @ 10 V
ID MAX
6.1 A
5.5 A
D
G
S
N−CHANNEL MOSFET
S
Pin 1
MARKING DIAGRAM
D
UDFN6
(mCOOL])
1
AD MG
CASE 517BG
G
AD = Specific Device Code
M = Date Code
G = Pb−Free Package
(*Note: Microdot may be in either location)
PIN CONNECTIONS
D1
D2
G3
D
S
(Top View)
6D
5D
4S
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
NTLUS4930N/D
datasheet pdf - http://www.DataSheet4U.net/
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NTLUS4930N
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.
Symbol
RθJA
RθJA
RθJA
Max
75.7
32.9
191.4
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
ID = 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 6.1 A
VGS = 4.5 V, ID = 5.5 A
VDS = 1.5 V, ID = 6.0 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1 MHz,
VDShttp://www.DataSheet4U.net/
=
15
V
VGS = 4.5 V, VDS = 15 V;
ID = 5.5 A
VGS = 10 V, VDS = 15 V;
ID = 5.5 A
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6)
VGS = 4.5 V, VDD = 15 V,
ID = 5.5 A, RG = 3 W
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDD = 15 V,
ID = 6.1 A, RG = 3 W
Forward Diode Voltage
VSD VGS = 0 V,
IS = 1.65 A
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
TJ = 25°C
TJ = 125°C
Min Typ Max
Units
30
+16
V
mV/°C
1.0 mA
10 mA
1.2 1.8 2.2
V
4.4 mV/°C
19 28.5
mW
27 36
16 S
476 pF
197
100
4.8 nC
0.4
1.54
2.15
8.7 nC
8.7
14.4
9.1
3.3
4.1
12.2
11.6
2.2
0.80 1.0
0.67
ns
ns
V
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NTLUS4930N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
DRAIN-SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 3.3 A
Reverse Recovery Charge
QRR
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min Typ Max Units
14.6 ns
6.8
7.8
5.4 nC
DEVICE ORDERING INFORMATION
Device
Package
Shipping†
NTLUS4930NTAG
UDFN6
(Pb−Free)
3000 / Tape & Reel
NTLUS4930NTBG
UDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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NTLUS4930N | Power MOSFET ( Transistor ) | ON Semiconductor |
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